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Transistors - Bipolar (BJT) - Takitahi, Mua-rawe

BCR 149F E6327
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BCR 149F E6327

Wahanga Tapeke: 3262

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 70mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

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BCR 148T E6327
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BCR 148T E6327

Wahanga Tapeke: 1882

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 70mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 47 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR148WE6327BTSA1
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BCR148WE6327BTSA1

Wahanga Tapeke: 1902

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 47 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 148F E6327
Infineon Technologies

BCR 148F E6327

Wahanga Tapeke: 3260

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 47 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 148L3 E6327
Infineon Technologies

BCR 148L3 E6327

Wahanga Tapeke: 1913

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 70mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 47 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 148F B6327
Infineon Technologies

BCR 148F B6327

Wahanga Tapeke: 1865

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 47 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 148 B6327
Infineon Technologies

BCR 148 B6327

Wahanga Tapeke: 1911

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 47 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 146T E6327
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BCR 146T E6327

Wahanga Tapeke: 1826

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 70mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 47 kOhms, Resistor - Papa Emitter (R2): 22 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V,

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BCR 146L3 E6327
Infineon Technologies

BCR 146L3 E6327

Wahanga Tapeke: 3245

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 70mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 47 kOhms, Resistor - Papa Emitter (R2): 22 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V,

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BCR 146F E6327
Infineon Technologies

BCR 146F E6327

Wahanga Tapeke: 1912

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 70mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 47 kOhms, Resistor - Papa Emitter (R2): 22 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V,

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BCR142WE6327HTSA1
Infineon Technologies

BCR142WE6327HTSA1

Wahanga Tapeke: 1824

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 22 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 142L3 E6327
Infineon Technologies

BCR 142L3 E6327

Wahanga Tapeke: 1858

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 22 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 142T E6327
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BCR 142T E6327

Wahanga Tapeke: 1827

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 22 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR142B6327HTLA1
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BCR142B6327HTLA1

Wahanga Tapeke: 1896

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 22 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Ki te hiahia
BCR 142F E6327
Infineon Technologies

BCR 142F E6327

Wahanga Tapeke: 1836

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 22 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 141T E6327
Infineon Technologies

BCR 141T E6327

Wahanga Tapeke: 1866

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 22 kOhms, Resistor - Papa Emitter (R2): 22 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V,

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BCR 141F E6327
Infineon Technologies

BCR 141F E6327

Wahanga Tapeke: 1842

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 22 kOhms, Resistor - Papa Emitter (R2): 22 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V,

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BCR 141L3 E6327
Infineon Technologies

BCR 141L3 E6327

Wahanga Tapeke: 1865

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 22 kOhms, Resistor - Papa Emitter (R2): 22 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V,

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BCR 139T E6327
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BCR 139T E6327

Wahanga Tapeke: 1828

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 22 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

Ki te hiahia
BCR 139L3 E6327
Infineon Technologies

BCR 139L3 E6327

Wahanga Tapeke: 1852

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 22 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

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BCR 139F E6327
Infineon Technologies

BCR 139F E6327

Wahanga Tapeke: 1851

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 22 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

Ki te hiahia
BCR135WE6327BTSA1
Infineon Technologies

BCR135WE6327BTSA1

Wahanga Tapeke: 1901

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 10 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 135T E6327
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BCR 135T E6327

Wahanga Tapeke: 1886

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 10 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Ki te hiahia
BCR 135L3 E6327
Infineon Technologies

BCR 135L3 E6327

Wahanga Tapeke: 1824

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 10 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Ki te hiahia
BCR133WE6327HTSA1
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BCR133WE6327HTSA1

Wahanga Tapeke: 1880

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 10 kOhms, Resistor - Papa Emitter (R2): 10 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

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BCR 135 B6327
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BCR 135 B6327

Wahanga Tapeke: 1826

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 10 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 133T E6327
Infineon Technologies

BCR 133T E6327

Wahanga Tapeke: 1833

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 10 kOhms, Resistor - Papa Emitter (R2): 10 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

Ki te hiahia
BCR 133L3 E6327
Infineon Technologies

BCR 133L3 E6327

Wahanga Tapeke: 5335

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 10 kOhms, Resistor - Papa Emitter (R2): 10 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

Ki te hiahia
BCR 133F E6327
Infineon Technologies

BCR 133F E6327

Wahanga Tapeke: 1858

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 10 kOhms, Resistor - Papa Emitter (R2): 10 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

Ki te hiahia
BCR129WE6327HTSA1
Infineon Technologies

BCR129WE6327HTSA1

Wahanga Tapeke: 1894

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 10 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

Ki te hiahia
BCR 133 B6327
Infineon Technologies

BCR 133 B6327

Wahanga Tapeke: 1845

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 10 kOhms, Resistor - Papa Emitter (R2): 10 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

Ki te hiahia
BCR 129T E6327
Infineon Technologies

BCR 129T E6327

Wahanga Tapeke: 1855

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 10 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

Ki te hiahia
BCR 129L3 E6327
Infineon Technologies

BCR 129L3 E6327

Wahanga Tapeke: 1847

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 10 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

Ki te hiahia
BCR119WE6327HTSA1
Infineon Technologies

BCR119WE6327HTSA1

Wahanga Tapeke: 1904

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 4.7 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

Ki te hiahia
BCR 119L3 E6327
Infineon Technologies

BCR 119L3 E6327

Wahanga Tapeke: 1849

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 4.7 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

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BCR 119T E6327
Infineon Technologies

BCR 119T E6327

Wahanga Tapeke: 1913

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 4.7 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

Ki te hiahia