Menu
MaoriMaori
Rfqs / ota
0Rfqs / ota

Transistors - Bipolar (BJT) - Takitahi, Mua-rawe

BCR 185L3 E6327
Infineon Technologies

BCR 185L3 E6327

Wahanga Tapeke: 1871

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 10 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Ki te hiahia
BCR183WE6327HTSA1
Infineon Technologies

BCR183WE6327HTSA1

Wahanga Tapeke: 1865

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 10 kOhms, Resistor - Papa Emitter (R2): 10 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

Ki te hiahia
BCR 183T E6327
Infineon Technologies

BCR 183T E6327

Wahanga Tapeke: 1847

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 10 kOhms, Resistor - Papa Emitter (R2): 10 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

Ki te hiahia
BCR 183L3 E6327
Infineon Technologies

BCR 183L3 E6327

Wahanga Tapeke: 1907

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 10 kOhms, Resistor - Papa Emitter (R2): 10 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

Ki te hiahia
BCR 183F E6327
Infineon Technologies

BCR 183F E6327

Wahanga Tapeke: 3202

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 10 kOhms, Resistor - Papa Emitter (R2): 10 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

Ki te hiahia
BCR 183 B6327
Infineon Technologies

BCR 183 B6327

Wahanga Tapeke: 1927

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 10 kOhms, Resistor - Papa Emitter (R2): 10 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

Ki te hiahia
BCR 179T E6327
Infineon Technologies

BCR 179T E6327

Wahanga Tapeke: 1862

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 10 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

Ki te hiahia
BCR 179L3 E6327
Infineon Technologies

BCR 179L3 E6327

Wahanga Tapeke: 1836

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 10 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

Ki te hiahia
BCR 179F E6327
Infineon Technologies

BCR 179F E6327

Wahanga Tapeke: 1917

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 10 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

Ki te hiahia
BCR169WE6327HTSA1
Infineon Technologies

BCR169WE6327HTSA1

Wahanga Tapeke: 1909

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 4.7 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

Ki te hiahia
BCR 169T E6327
Infineon Technologies

BCR 169T E6327

Wahanga Tapeke: 3183

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 4.7 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

Ki te hiahia
BCR 169L3 E6327
Infineon Technologies

BCR 169L3 E6327

Wahanga Tapeke: 1869

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 4.7 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

Ki te hiahia
BCR 169F E6327
Infineon Technologies

BCR 169F E6327

Wahanga Tapeke: 1913

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 4.7 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

Ki te hiahia
BCR 166T E6327
Infineon Technologies

BCR 166T E6327

Wahanga Tapeke: 1873

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 4.7 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Ki te hiahia
BCR 166L3 E6327
Infineon Technologies

BCR 166L3 E6327

Wahanga Tapeke: 1856

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 4.7 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Ki te hiahia
BCR 166F E6327
Infineon Technologies

BCR 166F E6327

Wahanga Tapeke: 1832

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 4.7 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Ki te hiahia
BCR166B6327HTLA1
Infineon Technologies

BCR166B6327HTLA1

Wahanga Tapeke: 1908

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 4.7 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Ki te hiahia
BCR 164L3 E6327
Infineon Technologies

BCR 164L3 E6327

Wahanga Tapeke: 1830

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 4.7 kOhms, Resistor - Papa Emitter (R2): 10 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

Ki te hiahia
BCR 164T E6327
Infineon Technologies

BCR 164T E6327

Wahanga Tapeke: 3231

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 4.7 kOhms, Resistor - Papa Emitter (R2): 10 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

Ki te hiahia
BCR 164F E6327
Infineon Technologies

BCR 164F E6327

Wahanga Tapeke: 1842

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 4.7 kOhms, Resistor - Papa Emitter (R2): 10 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

Ki te hiahia
BCR 162T E6327
Infineon Technologies

BCR 162T E6327

Wahanga Tapeke: 1839

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 4.7 kOhms, Resistor - Papa Emitter (R2): 4.7 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V,

Ki te hiahia
BCR 162F E6327
Infineon Technologies

BCR 162F E6327

Wahanga Tapeke: 1848

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 4.7 kOhms, Resistor - Papa Emitter (R2): 4.7 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V,

Ki te hiahia
BCR158WE6327HTSA1
Infineon Technologies

BCR158WE6327HTSA1

Wahanga Tapeke: 1840

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 2.2 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Ki te hiahia
BCR 162 B6327
Infineon Technologies

BCR 162 B6327

Wahanga Tapeke: 1887

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 4.7 kOhms, Resistor - Papa Emitter (R2): 4.7 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V,

Ki te hiahia
BCR 158T E6327
Infineon Technologies

BCR 158T E6327

Wahanga Tapeke: 1908

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 2.2 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Ki te hiahia
BCR 158L3 E6327
Infineon Technologies

BCR 158L3 E6327

Wahanga Tapeke: 1838

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 2.2 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Ki te hiahia
BCR 158 B6327
Infineon Technologies

BCR 158 B6327

Wahanga Tapeke: 1880

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 2.2 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Ki te hiahia
BCR 158F E6327
Infineon Technologies

BCR 158F E6327

Wahanga Tapeke: 1870

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 2.2 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Ki te hiahia
BCR 153T E6327
Infineon Technologies

BCR 153T E6327

Wahanga Tapeke: 1846

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 2.2 kOhms, Resistor - Papa Emitter (R2): 2.2 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V,

Ki te hiahia
BCR 153L3 E6327
Infineon Technologies

BCR 153L3 E6327

Wahanga Tapeke: 1899

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 2.2 kOhms, Resistor - Papa Emitter (R2): 2.2 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V,

Ki te hiahia
BCR 153F E6327
Infineon Technologies

BCR 153F E6327

Wahanga Tapeke: 1847

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 2.2 kOhms, Resistor - Papa Emitter (R2): 2.2 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V,

Ki te hiahia
BCR 151L3 E6327
Infineon Technologies

BCR 151L3 E6327

Wahanga Tapeke: 1890

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 50mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 100 kOhms, Resistor - Papa Emitter (R2): 100 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Ki te hiahia
BCR 151T E6327
Infineon Technologies

BCR 151T E6327

Wahanga Tapeke: 1855

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 50mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 100 kOhms, Resistor - Papa Emitter (R2): 100 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Ki te hiahia
BCR 151F E6327
Infineon Technologies

BCR 151F E6327

Wahanga Tapeke: 1827

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 50mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 100 kOhms, Resistor - Papa Emitter (R2): 100 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Ki te hiahia
BCR 149T E6327
Infineon Technologies

BCR 149T E6327

Wahanga Tapeke: 1902

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 70mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

Ki te hiahia
BCR 149L3 E6327
Infineon Technologies

BCR 149L3 E6327

Wahanga Tapeke: 1877

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 70mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

Ki te hiahia