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Transistors - FETs, MOSFETs - Kotahi

BTS247ZE3043AKSA1
Infineon Technologies

BTS247ZE3043AKSA1

Wahanga Tapeke: 153

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 33A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 18 mOhm @ 12A, 10V,

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BTS247ZAKSA1
Infineon Technologies

BTS247ZAKSA1

Wahanga Tapeke: 141

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 33A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 18 mOhm @ 12A, 10V,

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BTS244Z E3043
Infineon Technologies

BTS244Z E3043

Wahanga Tapeke: 84

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 35A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 13 mOhm @ 19A, 10V,

Ki te hiahia
BTS244Z E3062A
Infineon Technologies

BTS244Z E3062A

Wahanga Tapeke: 149

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 35A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 13 mOhm @ 19A, 10V,

Ki te hiahia
BTS113AE3064NKSA1
Infineon Technologies

BTS113AE3064NKSA1

Wahanga Tapeke: 94

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, Rds Kei (Max) @ Id, Vgs: 170 mOhm @ 5.8A, 4.5V,

Ki te hiahia
BTS244ZNKSA1
Infineon Technologies

BTS244ZNKSA1

Wahanga Tapeke: 175

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 35A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 13 mOhm @ 19A, 10V,

Ki te hiahia
BTS113ANKSA1
Infineon Technologies

BTS113ANKSA1

Wahanga Tapeke: 176

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, Rds Kei (Max) @ Id, Vgs: 170 mOhm @ 5.8A, 4.5V,

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BTS113AE3045ANTMA1
Infineon Technologies

BTS113AE3045ANTMA1

Wahanga Tapeke: 161

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, Rds Kei (Max) @ Id, Vgs: 170 mOhm @ 5.8A, 4.5V,

Ki te hiahia
BTS110NKSA1
Infineon Technologies

BTS110NKSA1

Wahanga Tapeke: 140

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10A (Tc), Rds Kei (Max) @ Id, Vgs: 200 mOhm @ 5A, 10V,

Ki te hiahia
BTS110E3045ANTMA1
Infineon Technologies

BTS110E3045ANTMA1

Wahanga Tapeke: 180

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10A (Tc), Rds Kei (Max) @ Id, Vgs: 200 mOhm @ 5A, 10V,

Ki te hiahia
BSS87 E6433
Infineon Technologies

BSS87 E6433

Wahanga Tapeke: 144

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 240V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 260mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6 Ohm @ 260mA, 10V,

Ki te hiahia
BSS84P E6433
Infineon Technologies

BSS84P E6433

Wahanga Tapeke: 174

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 170mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 8 Ohm @ 170mA, 10V,

Ki te hiahia
BSS225L6327HTSA1
Infineon Technologies

BSS225L6327HTSA1

Wahanga Tapeke: 6048

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 90mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 45 Ohm @ 90mA, 10V,

Ki te hiahia
BSS225
Infineon Technologies

BSS225

Wahanga Tapeke: 103

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 90mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 45 Ohm @ 90mA, 10V,

Ki te hiahia
BSS169 E6906
Infineon Technologies

BSS169 E6906

Wahanga Tapeke: 94

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 170mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 0V, 10V, Rds Kei (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V,

Ki te hiahia
BSS169 E6327
Infineon Technologies

BSS169 E6327

Wahanga Tapeke: 6104

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 170mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 0V, 10V, Rds Kei (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V,

Ki te hiahia
BSS159N E6906
Infineon Technologies

BSS159N E6906

Wahanga Tapeke: 129

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 230mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 0V, 10V, Rds Kei (Max) @ Id, Vgs: 3.5 Ohm @ 160mA, 10V,

Ki te hiahia
BSS159N E6327
Infineon Technologies

BSS159N E6327

Wahanga Tapeke: 170

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 230mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 0V, 10V, Rds Kei (Max) @ Id, Vgs: 3.5 Ohm @ 160mA, 10V,

Ki te hiahia
BSS139 E6906
Infineon Technologies

BSS139 E6906

Wahanga Tapeke: 116

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 250V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 0V, 10V, Rds Kei (Max) @ Id, Vgs: 14 Ohm @ 0.1mA, 10V,

Ki te hiahia
BSS139 E6327
Infineon Technologies

BSS139 E6327

Wahanga Tapeke: 166

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 250V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 0V, 10V, Rds Kei (Max) @ Id, Vgs: 14 Ohm @ 0.1mA, 10V,

Ki te hiahia
BSS138W E6433
Infineon Technologies

BSS138W E6433

Wahanga Tapeke: 159

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 280mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.5 Ohm @ 220mA, 10V,

Ki te hiahia
BSS138N E8004
Infineon Technologies

BSS138N E8004

Wahanga Tapeke: 164

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 230mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.5 Ohm @ 230mA, 10V,

Ki te hiahia
BSS138N E7854
Infineon Technologies

BSS138N E7854

Wahanga Tapeke: 6034

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 230mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.5 Ohm @ 230mA, 10V,

Ki te hiahia
BSS138N E6908
Infineon Technologies

BSS138N E6908

Wahanga Tapeke: 6083

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 230mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.5 Ohm @ 230mA, 10V,

Ki te hiahia
BSS138N E6433
Infineon Technologies

BSS138N E6433

Wahanga Tapeke: 174

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 230mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.5 Ohm @ 230mA, 10V,

Ki te hiahia
BSS127 E6327
Infineon Technologies

BSS127 E6327

Wahanga Tapeke: 172

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 21mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 500 Ohm @ 16mA, 10V,

Ki te hiahia
BSS126 E6906
Infineon Technologies

BSS126 E6906

Wahanga Tapeke: 106

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 21mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 0V, 10V, Rds Kei (Max) @ Id, Vgs: 500 Ohm @ 16mA, 10V,

Ki te hiahia
BSS126 E6327
Infineon Technologies

BSS126 E6327

Wahanga Tapeke: 152

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 21mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 0V, 10V, Rds Kei (Max) @ Id, Vgs: 500 Ohm @ 16mA, 10V,

Ki te hiahia
BSS123L7874XT
Infineon Technologies

BSS123L7874XT

Wahanga Tapeke: 161

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 170mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V,

Ki te hiahia
BSS119 E7978
Infineon Technologies

BSS119 E7978

Wahanga Tapeke: 169

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 170mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V,

Ki te hiahia
BSS123 E6433
Infineon Technologies

BSS123 E6433

Wahanga Tapeke: 169

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 170mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V,

Ki te hiahia
BSS119 E7796
Infineon Technologies

BSS119 E7796

Wahanga Tapeke: 122

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 170mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V,

Ki te hiahia
BSS119 E6433
Infineon Technologies

BSS119 E6433

Wahanga Tapeke: 145

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 170mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V,

Ki te hiahia
BSP92P E6327
Infineon Technologies

BSP92P E6327

Wahanga Tapeke: 140

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 250V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 260mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.8V, 10V, Rds Kei (Max) @ Id, Vgs: 12 Ohm @ 260mA, 10V,

Ki te hiahia
BSP615S2L
Infineon Technologies

BSP615S2L

Wahanga Tapeke: 129

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.8A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 90 mOhm @ 1.4A, 10V,

Ki te hiahia
BSP613P
Infineon Technologies

BSP613P

Wahanga Tapeke: 153

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.9A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 130 mOhm @ 2.9A, 10V,

Ki te hiahia