Transistors - FETs, MOSFETs - Kotahi | Nga Hua Semiconductor Motuhake | 100

BUK7613-100E,118

Wahanga Tapeke: 81658

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 72A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 13 mOhm @ 20A, 10V,

Ki te hiahia

Nexperia USA Inc.

BUK9611-80E,118

Wahanga Tapeke: 81701

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 80V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 75A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, Rds Kei (Max) @ Id, Vgs: 10 mOhm @ 20A, 10V,

Ki te hiahia

Nexperia USA Inc.

BUK662R7-55C,118

Wahanga Tapeke: 55838

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 2.7 mOhm @ 25A, 10V,

Ki te hiahia

Nexperia USA Inc.

BUK7613-60E,118

Wahanga Tapeke: 122570

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 58A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 13 mOhm @ 15A, 10V,

Ki te hiahia

Nexperia USA Inc.

BUK7635-100A,118

Wahanga Tapeke: 104642

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 41A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 35 mOhm @ 25A, 10V,

Ki te hiahia

Nexperia USA Inc.

BUK7609-75A,118

Wahanga Tapeke: 62207

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 75V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 75A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 9 mOhm @ 25A, 10V,

Ki te hiahia

Nexperia USA Inc.

BUK765R2-40B,118

Wahanga Tapeke: 95452

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 75A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 5.2 mOhm @ 25A, 10V,

Ki te hiahia

Nexperia USA Inc.

BUK961R6-40E,118

Wahanga Tapeke: 47700

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, Rds Kei (Max) @ Id, Vgs: 1.4 mOhm @ 25A, 10V,

Ki te hiahia

Nexperia USA Inc.

BUK661R9-40C,118

Wahanga Tapeke: 55848

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.9 mOhm @ 25A, 10V,

Ki te hiahia

Nexperia USA Inc.

BUK763R8-80E,118

Wahanga Tapeke: 47671

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 80V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 3.8 mOhm @ 25A, 10V,

Ki te hiahia

Nexperia USA Inc.

BUK9605-30A,118

Wahanga Tapeke: 33320

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 75A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, 10V, Rds Kei (Max) @ Id, Vgs: 4.6 mOhm @ 25A, 10V,

Ki te hiahia

Nexperia USA Inc.

BUK964R1-40E,118

Wahanga Tapeke: 84326

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 75A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, Rds Kei (Max) @ Id, Vgs: 3.5 mOhm @ 25A, 10V,

Ki te hiahia

Nexperia USA Inc.

BUK9608-55B,118

Wahanga Tapeke: 94678

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 75A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, 10V, Rds Kei (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V,

Ki te hiahia

Nexperia USA Inc.

BUK9Y14-40B,115

Wahanga Tapeke: 113450

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 56A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, Rds Kei (Max) @ Id, Vgs: 11 mOhm @ 20A, 10V,

Ki te hiahia

Nexperia USA Inc.

BUK9Y12-100E,115

Wahanga Tapeke: 118607

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 85A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, Rds Kei (Max) @ Id, Vgs: 12 mOhm @ 25A, 5V,

Ki te hiahia

Nexperia USA Inc.

BUK9Y11-30B,115

Wahanga Tapeke: 106804

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 59A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 9 mOhm @ 25A, 10V,

Ki te hiahia

Nexperia USA Inc.

BUK9609-40B,118

Wahanga Tapeke: 113511

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 75A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, 10V, Rds Kei (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V,

Ki te hiahia

Nexperia USA Inc.

BUK9675-100A,118

Wahanga Tapeke: 116992

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 23A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, 10V, Rds Kei (Max) @ Id, Vgs: 72 mOhm @ 10A, 10V,

Ki te hiahia

Nexperia USA Inc.

BUK762R6-40E,118

Wahanga Tapeke: 64653

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 2.6 mOhm @ 25A, 10V,

Ki te hiahia

Nexperia USA Inc.

BUK762R0-40C,118

Wahanga Tapeke: 55835

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 2 mOhm @ 25A, 10V,

Ki te hiahia

Nexperia USA Inc.

BUK7623-75A,118

Wahanga Tapeke: 53109

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 75V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 53A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 23 mOhm @ 25A, 10V,

Ki te hiahia

Nexperia USA Inc.

BUK9624-55A,118

Wahanga Tapeke: 135717

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 46A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 21.7 mOhm @ 25A, 10V,

Ki te hiahia

Nexperia USA Inc.

BUK962R5-60E,118

Wahanga Tapeke: 47614

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, Rds Kei (Max) @ Id, Vgs: 2.5 mOhm @ 25A, 5V,

Ki te hiahia

Nexperia USA Inc.

BUK763R1-60E,118

Wahanga Tapeke: 58780

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 3.1 mOhm @ 25A, 10V,

Ki te hiahia

Nexperia USA Inc.

BUK763R1-40B,118

Wahanga Tapeke: 30385

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 75A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 3.1 mOhm @ 25A, 10V,

Ki te hiahia

Nexperia USA Inc.

BUK7608-40B,118

Wahanga Tapeke: 116117

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 75A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 8 mOhm @ 25A, 10V,

Ki te hiahia

Nexperia USA Inc.

BUK9660-100A,118

Wahanga Tapeke: 148556

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 26A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 58 mOhm @ 15A, 10V,

Ki te hiahia

Infineon Technologies

BSP92PH6327XTSA1

Wahanga Tapeke: 175847

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 250V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 260mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.8V, 10V, Rds Kei (Max) @ Id, Vgs: 12 Ohm @ 260mA, 10V,

Ki te hiahia

Infineon Technologies

BSP170PH6327XTSA1

Wahanga Tapeke: 177989

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.9A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 300 mOhm @ 1.9A, 10V,

Ki te hiahia

Infineon Technologies

BSS225H6327FTSA1

Wahanga Tapeke: 122139

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 90mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 45 Ohm @ 90mA, 10V,

Ki te hiahia

Infineon Technologies

BSS131L6327HTSA1

Wahanga Tapeke: 673

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 240V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 110mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 14 Ohm @ 100mA, 10V,

Ki te hiahia

Infineon Technologies

BS7067N06LS3G

Wahanga Tapeke: 647

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 14A (Ta), 20A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6.7 mOhm @ 20A, 10V,

Ki te hiahia

Infineon Technologies

BSP318SL6327HTSA1

Wahanga Tapeke: 337

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.6A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 90 mOhm @ 2.6A, 10V,

Ki te hiahia

Infineon Technologies

BSC042N03S G

Wahanga Tapeke: 325

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20A (Ta), 95A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 4.2 mOhm @ 50A, 10V,

Ki te hiahia

ON Semiconductor

BS170_J35Z

Wahanga Tapeke: 719

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 500mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 5 Ohm @ 200mA, 10V,

Ki te hiahia

Vishay Siliconix

BS250KL-TR1-E3

Wahanga Tapeke: 409

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 270mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V,

Ki te hiahia