Transistors - FETs, MOSFETs - Kotahi | Nga Hua Semiconductor Motuhake | 100

BUK625R0-40C,118

Wahanga Tapeke: 133435

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 90A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V,

Ki te hiahia

Nexperia USA Inc.

BUK7207-30B,118

Wahanga Tapeke: 166786

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 75A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V,

Ki te hiahia

Nexperia USA Inc.

BUK6212-40C,118

Wahanga Tapeke: 100786

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 50A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 11.2 mOhm @ 12A, 10V,

Ki te hiahia

Nexperia USA Inc.

BUK964R4-40B,118

Wahanga Tapeke: 76392

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 75A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, 10V, Rds Kei (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V,

Ki te hiahia

Nexperia USA Inc.

BUK9620-100B,118

Wahanga Tapeke: 103640

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 63A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 18.5 mOhm @ 25A, 10V,

Ki te hiahia

Nexperia USA Inc.

BSH111,215

Wahanga Tapeke: 8827

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 335mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 4 Ohm @ 500mA, 4.5V,

Ki te hiahia

Nexperia USA Inc.

BSH111,235

Wahanga Tapeke: 8860

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 335mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 4 Ohm @ 500mA, 4.5V,

Ki te hiahia

Nexperia USA Inc.

BUK9504-40A,127

Wahanga Tapeke: 8826

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 75A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.3V, 10V, Rds Kei (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V,

Ki te hiahia

Nexperia USA Inc.

BUK7907-55AIE,127

Wahanga Tapeke: 22756

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 75A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 7 mOhm @ 50A, 10V,

Ki te hiahia

Nexperia USA Inc.

BUK7908-40AIE,127

Wahanga Tapeke: 27809

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 75A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 8 mOhm @ 50A, 10V,

Ki te hiahia

Nexperia USA Inc.

BUK7515-100A,127

Wahanga Tapeke: 33637

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 75A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 15 mOhm @ 25A, 10V,

Ki te hiahia

Nexperia USA Inc.

BSN20,215

Wahanga Tapeke: 8842

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 50V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 173mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, 10V, Rds Kei (Max) @ Id, Vgs: 15 Ohm @ 100mA, 10V,

Ki te hiahia

Nexperia USA Inc.

BSN20,235

Wahanga Tapeke: 8816

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 50V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 173mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, 10V, Rds Kei (Max) @ Id, Vgs: 15 Ohm @ 100mA, 10V,

Ki te hiahia

Nexperia USA Inc.

BUK9518-55A,127

Wahanga Tapeke: 8881

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 61A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 16 mOhm @ 25A, 10V,

Ki te hiahia

Nexperia USA Inc.

BUK953R2-40B,127

Wahanga Tapeke: 5886

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 2.8 mOhm @ 25A, 10V,

Ki te hiahia

Nexperia USA Inc.

BSH121,135

Wahanga Tapeke: 166507

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 75V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 300mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 4 Ohm @ 500mA, 4.5V,

Ki te hiahia

Nexperia USA Inc.

BUK7105-40AIE,118

Wahanga Tapeke: 8799

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 75A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 5 mOhm @ 50A, 10V,

Ki te hiahia

Nexperia USA Inc.

BUK7109-75ATE,118

Wahanga Tapeke: 8816

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 75V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 75A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 9 mOhm @ 50A, 10V,

Ki te hiahia

Nexperia USA Inc.

BUK7109-75AIE,118

Wahanga Tapeke: 8824

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 75V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 75A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 9 mOhm @ 50A, 10V,

Ki te hiahia

ON Semiconductor

BSS100

Wahanga Tapeke: 8883

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 220mA (Ta), Rds Kei (Max) @ Id, Vgs: 6 Ohm @ 220mA, 10V,

Ki te hiahia

ON Semiconductor

BSS110

Wahanga Tapeke: 8859

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 50V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 170mA (Ta), Rds Kei (Max) @ Id, Vgs: 10 Ohm @ 170mA, 10V,

Ki te hiahia

Infineon Technologies

BSO065N03MSGXUMA1

Wahanga Tapeke: 5958

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 13A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6.5 mOhm @ 16A, 10V,

Ki te hiahia

Diodes Incorporated

BSS138TA

Wahanga Tapeke: 178827

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 50V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 200mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 3.5 Ohm @ 220mA, 10V,

Ki te hiahia

Diodes Incorporated

BSS84TA

Wahanga Tapeke: 8844

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 50V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 130mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, Rds Kei (Max) @ Id, Vgs: 10 Ohm @ 100mA, 5V,

Ki te hiahia

NXP USA Inc.

BUK7506-75B,127

Wahanga Tapeke: 8848

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 75V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 75A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 5.6 mOhm @ 25A, 10V,

Ki te hiahia

NXP USA Inc.

BSH205,215

Wahanga Tapeke: 8830

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 750mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 400 mOhm @ 430mA, 4.5V,

Ki te hiahia

NXP USA Inc.

BUK9524-55A,127

Wahanga Tapeke: 8825

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 46A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 21.7 mOhm @ 25A, 10V,

Ki te hiahia

NXP USA Inc.

BSH112,235

Wahanga Tapeke: 8798

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 300mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V,

Ki te hiahia

NXP USA Inc.

BUK9880-55A,115

Wahanga Tapeke: 8884

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 73 mOhm @ 8A, 10V,

Ki te hiahia

NXP USA Inc.

BUK7E07-55B,127

Wahanga Tapeke: 5935

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 75A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 7.1 mOhm @ 25A, 10V,

Ki te hiahia

NXP USA Inc.

BUK753R1-40B,127

Wahanga Tapeke: 8810

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 75A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 3.1 mOhm @ 25A, 10V,

Ki te hiahia

NXP USA Inc.

BUK9506-55B,127

Wahanga Tapeke: 8845

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 75A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 5.4 mOhm @ 25A, 10V,

Ki te hiahia

NXP USA Inc.

BUK9623-75A,118

Wahanga Tapeke: 8887

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 75V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 53A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 22 mOhm @ 25A, 10V,

Ki te hiahia

NXP USA Inc.

BUK6240-75C,118

Wahanga Tapeke: 8827

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 75V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 22A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 46 mOhm @ 10A, 10V,

Ki te hiahia

NXP USA Inc.

BUK7614-55A,118

Wahanga Tapeke: 8843

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 73A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 14 mOhm @ 25A, 10V,

Ki te hiahia

NXP USA Inc.

BUK754R3-75C,127

Wahanga Tapeke: 5885

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 75V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 4.3 mOhm @ 25A, 10V,

Ki te hiahia