Transistors - FETs, MOSFETs - Kotahi

Kāinga
Transistors - FETs, MOSFETs - Kotahi

C2M1000170J-TR

Wahanga Tapeke: 12544

Momo FET: N-Channel, Hangarau: SiCFET (Silicon Carbide), Tohaina ki te Hiko Puna (Vdss): 1700V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.3A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 20V, Rds Kei (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 20V,

Momotae

C3M0065090J-TR

Wahanga Tapeke: 6828

Momo FET: N-Channel, Hangarau: SiCFET (Silicon Carbide), Tohaina ki te Hiko Puna (Vdss): 900V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 35A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 15V, Rds Kei (Max) @ Id, Vgs: 78 mOhm @ 20A, 15V,

Momotae

C3M0120100K

Wahanga Tapeke: 8031

Momo FET: N-Channel, Hangarau: SiCFET (Silicon Carbide), Tohaina ki te Hiko Puna (Vdss): 1000V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 22A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 15V, Rds Kei (Max) @ Id, Vgs: 155 mOhm @ 15A, 15V,

Momotae

C3M0120090J-TR

Wahanga Tapeke: 10635

Momo FET: N-Channel, Hangarau: SiCFET (Silicon Carbide), Tohaina ki te Hiko Puna (Vdss): 900V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 22A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 15V, Rds Kei (Max) @ Id, Vgs: 155 mOhm @ 15A, 15V,

Momotae

C3M0030090K

Wahanga Tapeke: 2469

Momo FET: N-Channel, Hangarau: SiCFET (Silicon Carbide), Tohaina ki te Hiko Puna (Vdss): 900V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 63A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 15V, Rds Kei (Max) @ Id, Vgs: 39 mOhm @ 35A, 15V,

Momotae

C2M0045170P

Wahanga Tapeke: 2736

Momo FET: N-Channel, Hangarau: SiCFET (Silicon Carbide), Tohaina ki te Hiko Puna (Vdss): 1700V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 72A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 20V, Rds Kei (Max) @ Id, Vgs: 59 mOhm @ 50A, 20V,

Momotae

E3M0120090D

Wahanga Tapeke: 3307

Momo FET: N-Channel, Hangarau: SiCFET (Silicon Carbide), Tohaina ki te Hiko Puna (Vdss): 900V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 23A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 15V, Rds Kei (Max) @ Id, Vgs: 155 mOhm @ 15A, 15V,

Momotae

C3M0280090J

Wahanga Tapeke: 19166

Momo FET: N-Channel, Hangarau: SiCFET (Silicon Carbide), Tohaina ki te Hiko Puna (Vdss): 900V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 15V, Rds Kei (Max) @ Id, Vgs: 360 mOhm @ 7.5A, 15V,

Momotae

C3M0075120K

Wahanga Tapeke: 5595

Momo FET: N-Channel, Hangarau: SiCFET (Silicon Carbide), Tohaina ki te Hiko Puna (Vdss): 1200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 30A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 15V, Rds Kei (Max) @ Id, Vgs: 90 mOhm @ 20A, 15V,

Momotae

C3M0120100J

Wahanga Tapeke: 3965

Momo FET: N-Channel, Hangarau: SiCFET (Silicon Carbide), Tohaina ki te Hiko Puna (Vdss): 1000V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 22A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 15V, Rds Kei (Max) @ Id, Vgs: 155 mOhm @ 15A, 15V,

Momotae

CPMF-1200-S080B

CPMF-1200-S080B

Wahanga Tapeke: 2177

Momo FET: N-Channel, Hangarau: SiCFET (Silicon Carbide), Tohaina ki te Hiko Puna (Vdss): 1200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 50A (Tj), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 20V, Rds Kei (Max) @ Id, Vgs: 110 mOhm @ 20A, 20V,

Momotae

C2M0025120D

Wahanga Tapeke: 1093

Momo FET: N-Channel, Hangarau: SiCFET (Silicon Carbide), Tohaina ki te Hiko Puna (Vdss): 1200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 90A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 20V, Rds Kei (Max) @ Id, Vgs: 34 mOhm @ 50A, 20V,

Momotae

C3M0280090J-TR

Wahanga Tapeke: 19172

Momo FET: N-Channel, Hangarau: SiCFET (Silicon Carbide), Tohaina ki te Hiko Puna (Vdss): 900V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 15V, Rds Kei (Max) @ Id, Vgs: 360 mOhm @ 7.5A, 15V,

Momotae

C3M0065100J

Wahanga Tapeke: 2848

Momo FET: N-Channel, Hangarau: SiCFET (Silicon Carbide), Tohaina ki te Hiko Puna (Vdss): 1000V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 35A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 15V, Rds Kei (Max) @ Id, Vgs: 78 mOhm @ 20A, 15V,

Momotae

C2M0080170P

Wahanga Tapeke: 2196

Momo FET: N-Channel, Hangarau: SiCFET (Silicon Carbide), Tohaina ki te Hiko Puna (Vdss): 1700V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 40A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 20V, Rds Kei (Max) @ Id, Vgs: 125 mOhm @ 28A, 20V,

Momotae

CPMF-1200-S160B

CPMF-1200-S160B

Wahanga Tapeke: 2236

Momo FET: N-Channel, Hangarau: SiCFET (Silicon Carbide), Tohaina ki te Hiko Puna (Vdss): 1200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 28A (Tj), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 20V, Rds Kei (Max) @ Id, Vgs: 220 mOhm @ 10A, 20V,

Momotae

C2M0045170D

Wahanga Tapeke: 866

Momo FET: N-Channel, Hangarau: SiCFET (Silicon Carbide), Tohaina ki te Hiko Puna (Vdss): 1700V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 72A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 20V, Rds Kei (Max) @ Id, Vgs: 70 mOhm @ 50A, 20V,

Momotae

C3M0280090D

Wahanga Tapeke: 20168

Momo FET: N-Channel, Hangarau: SiCFET (Silicon Carbide), Tohaina ki te Hiko Puna (Vdss): 900V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 15V, Rds Kei (Max) @ Id, Vgs: 360 mOhm @ 7.5A, 15V,

Momotae

C3M0075120J

Wahanga Tapeke: 5794

Momo FET: N-Channel, Hangarau: SiCFET (Silicon Carbide), Tohaina ki te Hiko Puna (Vdss): 1200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 30A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 15V, Rds Kei (Max) @ Id, Vgs: 90 mOhm @ 20A, 15V,

Momotae

C3M0065100K

Wahanga Tapeke: 5808

Momo FET: N-Channel, Hangarau: SiCFET (Silicon Carbide), Tohaina ki te Hiko Puna (Vdss): 1000V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 35A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 15V, Rds Kei (Max) @ Id, Vgs: 78 mOhm @ 20A, 15V,

Momotae

C3M0120090J

Wahanga Tapeke: 10579

Momo FET: N-Channel, Hangarau: SiCFET (Silicon Carbide), Tohaina ki te Hiko Puna (Vdss): 900V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 22A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 15V, Rds Kei (Max) @ Id, Vgs: 155 mOhm @ 15A, 15V,

Momotae

CMF20120D

Wahanga Tapeke: 976

Momo FET: N-Channel, Hangarau: SiCFET (Silicon Carbide), Tohaina ki te Hiko Puna (Vdss): 1200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 42A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 20V, Rds Kei (Max) @ Id, Vgs: 110 mOhm @ 20A, 20V,

Momotae

CMF10120D

Wahanga Tapeke: 1120

Momo FET: N-Channel, Hangarau: SiCFET (Silicon Carbide), Tohaina ki te Hiko Puna (Vdss): 1200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 24A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 20V, Rds Kei (Max) @ Id, Vgs: 220 mOhm @ 10A, 20V,

Momotae

C3M0120090D

Wahanga Tapeke: 10936

Momo FET: N-Channel, Hangarau: SiCFET (Silicon Carbide), Tohaina ki te Hiko Puna (Vdss): 900V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 23A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 15V, Rds Kei (Max) @ Id, Vgs: 155 mOhm @ 15A, 15V,

Momotae

C2M0040120D

Wahanga Tapeke: 2045

Momo FET: N-Channel, Hangarau: SiCFET (Silicon Carbide), Tohaina ki te Hiko Puna (Vdss): 1200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 20V, Rds Kei (Max) @ Id, Vgs: 52 mOhm @ 40A, 20V,

Momotae

C2M0160120D

Wahanga Tapeke: 8382

Momo FET: N-Channel, Hangarau: SiCFET (Silicon Carbide), Tohaina ki te Hiko Puna (Vdss): 1200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 19A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 20V, Rds Kei (Max) @ Id, Vgs: 196 mOhm @ 10A, 20V,

Momotae

C3M0065100J-TR

Wahanga Tapeke: 93

Momo FET: N-Channel, Hangarau: SiC (Silicon Carbide Junction Transistor), Tohaina ki te Hiko Puna (Vdss): 1000V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 35A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 15V, Rds Kei (Max) @ Id, Vgs: 78 mOhm @ 20A, 15V,

Momotae

C2M1000170J

Wahanga Tapeke: 12480

Momo FET: N-Channel, Hangarau: SiCFET (Silicon Carbide), Tohaina ki te Hiko Puna (Vdss): 1700V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.3A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 20V, Rds Kei (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 20V,

Momotae

C3M0075120J-TR

Wahanga Tapeke: 280

Momo FET: N-Channel, Hangarau: SiC (Silicon Carbide Junction Transistor), Tohaina ki te Hiko Puna (Vdss): 1200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 30A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 15V, Rds Kei (Max) @ Id, Vgs: 90 mOhm @ 20A, 15V,

Momotae

E3M0065090D

Wahanga Tapeke: 9953

Momo FET: N-Channel, Hangarau: SiCFET (Silicon Carbide), Tohaina ki te Hiko Puna (Vdss): 900V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 35A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 15V, Rds Kei (Max) @ Id, Vgs: 84.5 mOhm @ 20A, 15V,

Momotae

E3M0280090D

Wahanga Tapeke: 8442

Momo FET: N-Channel, Hangarau: SiCFET (Silicon Carbide), Tohaina ki te Hiko Puna (Vdss): 900V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 15V, Rds Kei (Max) @ Id, Vgs: 360 mOhm @ 7.5A, 15V,

Momotae

C3M0065090D

Wahanga Tapeke: 6981

Momo FET: N-Channel, Hangarau: SiCFET (Silicon Carbide), Tohaina ki te Hiko Puna (Vdss): 900V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 36A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 15V, Rds Kei (Max) @ Id, Vgs: 78 mOhm @ 20A, 15V,

Momotae

C3M0065090J

Wahanga Tapeke: 6843

Momo FET: N-Channel, Hangarau: SiCFET (Silicon Carbide), Tohaina ki te Hiko Puna (Vdss): 900V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 35A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 15V, Rds Kei (Max) @ Id, Vgs: 78 mOhm @ 20A, 15V,

Momotae

C2M0280120D

Wahanga Tapeke: 12900

Momo FET: N-Channel, Hangarau: SiCFET (Silicon Carbide), Tohaina ki te Hiko Puna (Vdss): 1200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 20V, Rds Kei (Max) @ Id, Vgs: 370 mOhm @ 6A, 20V,

Momotae

C2M1000170D

Wahanga Tapeke: 13276

Momo FET: N-Channel, Hangarau: SiCFET (Silicon Carbide), Tohaina ki te Hiko Puna (Vdss): 1700V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.9A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 20V, Rds Kei (Max) @ Id, Vgs: 1.1 Ohm @ 2A, 20V,

Momotae

C2M0080120D

Wahanga Tapeke: 4209

Momo FET: N-Channel, Hangarau: SiCFET (Silicon Carbide), Tohaina ki te Hiko Puna (Vdss): 1200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 36A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 20V, Rds Kei (Max) @ Id, Vgs: 98 mOhm @ 20A, 20V,

Momotae

36