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Transistors - FETs, MOSFETs - Kotahi

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  • Transistors - FETs, MOSFETs - Kotahi
SIHG21N65EF-GE3
Vishay Siliconix

SIHG21N65EF-GE3

Wahanga Tapeke: 12350

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 21A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V,

Momotae
SI1422DH-T1-GE3
Vishay Siliconix

SI1422DH-T1-GE3

Wahanga Tapeke: 107910

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 26 mOhm @ 5.1A, 4.5V,

Momotae
SQJ422EP-T1_GE3
Vishay Siliconix

SQJ422EP-T1_GE3

Wahanga Tapeke: 105698

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 74A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.4 mOhm @ 18A, 10V,

Momotae
SIHF22N60E-GE3
Vishay Siliconix

SIHF22N60E-GE3

Wahanga Tapeke: 32877

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 21A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V,

Momotae
SIHG24N65E-GE3
Vishay Siliconix

SIHG24N65E-GE3

Wahanga Tapeke: 10853

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 24A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 145 mOhm @ 12A, 10V,

Momotae
SIHP28N65EF-GE3
Vishay Siliconix

SIHP28N65EF-GE3

Wahanga Tapeke: 10311

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 28A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 117 mOhm @ 14A, 10V,

Momotae
SI3433CDV-T1-GE3
Vishay Siliconix

SI3433CDV-T1-GE3

Wahanga Tapeke: 120260

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 38 mOhm @ 5.2A, 4.5V,

Momotae
SISA24DN-T1-GE3
Vishay Siliconix

SISA24DN-T1-GE3

Wahanga Tapeke: 187428

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 1.4 mOhm @ 15A, 10V,

Momotae
SIHG28N60EF-GE3
Vishay Siliconix

SIHG28N60EF-GE3

Wahanga Tapeke: 10031

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 28A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 123 mOhm @ 14A, 10V,

Momotae
SI4056DY-T1-GE3
Vishay Siliconix

SI4056DY-T1-GE3

Wahanga Tapeke: 199641

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11.1A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 23 mOhm @ 15A, 10V,

Momotae
SIA414DJ-T1-GE3
Vishay Siliconix

SIA414DJ-T1-GE3

Wahanga Tapeke: 176137

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 8V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.2V, 4.5V, Rds Kei (Max) @ Id, Vgs: 11 mOhm @ 9.7A, 4.5V,

Momotae
SI7149DP-T1-GE3
Vishay Siliconix

SI7149DP-T1-GE3

Wahanga Tapeke: 96788

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 50A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 5.2 mOhm @ 15A, 10V,

Momotae
IRF830STRLPBF
Vishay Siliconix

IRF830STRLPBF

Wahanga Tapeke: 54793

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.5 Ohm @ 2.7A, 10V,

Momotae
SIHB21N65EF-GE3
Vishay Siliconix

SIHB21N65EF-GE3

Wahanga Tapeke: 13053

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 21A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V,

Momotae
SI2307BDS-T1-E3
Vishay Siliconix

SI2307BDS-T1-E3

Wahanga Tapeke: 153121

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 78 mOhm @ 3.2A, 10V,

Momotae
SI3458BDV-T1-E3
Vishay Siliconix

SI3458BDV-T1-E3

Wahanga Tapeke: 199617

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.1A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 100 mOhm @ 3.2A, 10V,

Momotae
SI3493BDV-T1-E3
Vishay Siliconix

SI3493BDV-T1-E3

Wahanga Tapeke: 137186

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 27.5 mOhm @ 7A, 4.5V,

Momotae
SUD50P08-25L-E3
Vishay Siliconix

SUD50P08-25L-E3

Wahanga Tapeke: 57347

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 80V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 50A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 25.2 mOhm @ 12.5A, 10V,

Momotae
SIR692DP-T1-RE3
Vishay Siliconix

SIR692DP-T1-RE3

Wahanga Tapeke: 85603

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 250V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 24.2A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 7.5V, 10V, Rds Kei (Max) @ Id, Vgs: 63 mOhm @ 10A, 10V,

Momotae
SQD25N15-52_GE3
Vishay Siliconix

SQD25N15-52_GE3

Wahanga Tapeke: 39824

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 150V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 25A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 52 mOhm @ 15A, 10V,

Momotae
IRLL014TRPBF
Vishay Siliconix

IRLL014TRPBF

Wahanga Tapeke: 156687

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.7A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4V, 5V, Rds Kei (Max) @ Id, Vgs: 200 mOhm @ 1.6A, 5V,

Momotae
SQ2361AEES-T1_GE3
Vishay Siliconix

SQ2361AEES-T1_GE3

Wahanga Tapeke: 158861

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.8A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 170 mOhm @ 2.4A, 10V,

Momotae
SISS26DN-T1-GE3
Vishay Siliconix

SISS26DN-T1-GE3

Wahanga Tapeke: 32308

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 4.5 mOhm @ 15A, 10V,

Momotae
SI8429DB-T1-E1
Vishay Siliconix

SI8429DB-T1-E1

Wahanga Tapeke: 158589

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 8V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11.7A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.2V, 4.5V, Rds Kei (Max) @ Id, Vgs: 35 mOhm @ 1A, 4.5V,

Momotae
SUD45P03-09-GE3
Vishay Siliconix

SUD45P03-09-GE3

Wahanga Tapeke: 124843

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 45A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 8.7 mOhm @ 20A, 10V,

Momotae
SIHH24N65EF-T1-GE3
Vishay Siliconix

SIHH24N65EF-T1-GE3

Wahanga Tapeke: 16548

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 23A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 158 mOhm @ 12A, 10V,

Momotae
SUD08P06-155L-GE3
Vishay Siliconix

SUD08P06-155L-GE3

Wahanga Tapeke: 193963

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8.4A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 155 mOhm @ 5A, 10V,

Momotae
SQ3427AEEV-T1_GE3
Vishay Siliconix

SQ3427AEEV-T1_GE3

Wahanga Tapeke: 184741

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.3A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 95 mOhm @ 4.5A, 10V,

Momotae
SI1330EDL-T1-E3
Vishay Siliconix

SI1330EDL-T1-E3

Wahanga Tapeke: 118364

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 240mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 3V, 10V, Rds Kei (Max) @ Id, Vgs: 2.5 Ohm @ 250mA, 10V,

Momotae
SUM110N10-09-E3
Vishay Siliconix

SUM110N10-09-E3

Wahanga Tapeke: 42606

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 110A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 9.5 mOhm @ 30A, 10V,

Momotae
SI1441EDH-T1-GE3
Vishay Siliconix

SI1441EDH-T1-GE3

Wahanga Tapeke: 126542

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 41 mOhm @ 5A, 4.5V,

Momotae
SUD50N03-09P-E3
Vishay Siliconix

SUD50N03-09P-E3

Wahanga Tapeke: 98650

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 63A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 9.5 mOhm @ 20A, 10V,

Momotae
SI8483DB-T2-E1
Vishay Siliconix

SI8483DB-T2-E1

Wahanga Tapeke: 167358

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 16A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 26 mOhm @ 1.5A, 4.5V,

Momotae
SI7421DN-T1-GE3
Vishay Siliconix

SI7421DN-T1-GE3

Wahanga Tapeke: 113309

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.4A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 25 mOhm @ 9.8A, 10V,

Momotae
SIR800DP-T1-GE3
Vishay Siliconix

SIR800DP-T1-GE3

Wahanga Tapeke: 93648

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 50A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 10V, Rds Kei (Max) @ Id, Vgs: 2.3 mOhm @ 15A, 10V,

Momotae
SIHW47N60EF-GE3
Vishay Siliconix

SIHW47N60EF-GE3

Wahanga Tapeke: 10860

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 47A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 65 mOhm @ 24A, 10V,

Momotae