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Transistors - FETs, MOSFETs - Kotahi

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  • Transistors - FETs, MOSFETs - Kotahi
SI7104DN-T1-E3
Vishay Siliconix

SI7104DN-T1-E3

Wahanga Tapeke: 70460

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 35A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 3.7 mOhm @ 26.1A, 4.5V,

Momotae
SI4368DY-T1-GE3
Vishay Siliconix

SI4368DY-T1-GE3

Wahanga Tapeke: 43176

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 17A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.2 mOhm @ 25A, 10V,

Momotae
SIRA12BDP-T1-GE3
Vishay Siliconix

SIRA12BDP-T1-GE3

Wahanga Tapeke: 248

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 27A (Ta), 60A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 4.3 mOhm @ 10A, 10V,

Momotae
SI3464DV-T1-GE3
Vishay Siliconix

SI3464DV-T1-GE3

Wahanga Tapeke: 171482

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 24 mOhm @ 7.5A, 4.5V,

Momotae
SI7880ADP-T1-GE3
Vishay Siliconix

SI7880ADP-T1-GE3

Wahanga Tapeke: 33676

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 40A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3 mOhm @ 20A, 10V,

Momotae
SIRA90DP-T1-RE3
Vishay Siliconix

SIRA90DP-T1-RE3

Wahanga Tapeke: 245

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 0.8 mOhm @ 20A, 10V,

Momotae
SISS67DN-T1-GE3
Vishay Siliconix

SISS67DN-T1-GE3

Wahanga Tapeke: 244

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 5.5 mOhm @ 15A, 10V,

Momotae
SI7230DN-T1-GE3
Vishay Siliconix

SI7230DN-T1-GE3

Wahanga Tapeke: 113255

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 12 mOhm @ 14A, 10V,

Momotae
SISA12ADN-T1-GE3
Vishay Siliconix

SISA12ADN-T1-GE3

Wahanga Tapeke: 187703

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 25A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 4.3 mOhm @ 10A, 10V,

Momotae
SIRA14DP-T1-GE3
Vishay Siliconix

SIRA14DP-T1-GE3

Wahanga Tapeke: 193041

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 58A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 5.1 mOhm @ 10A, 10V,

Momotae
SIR166DP-T1-GE3
Vishay Siliconix

SIR166DP-T1-GE3

Wahanga Tapeke: 110153

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 40A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.2 mOhm @ 15A, 10V,

Momotae
SIR670DP-T1-GE3
Vishay Siliconix

SIR670DP-T1-GE3

Wahanga Tapeke: 130549

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 4.8 mOhm @ 20A, 10V,

Momotae
SIR165DP-T1-GE3
Vishay Siliconix

SIR165DP-T1-GE3

Wahanga Tapeke: 258

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 4.6 mOhm @ 15A, 10V,

Momotae
SI7806ADN-T1-GE3
Vishay Siliconix

SI7806ADN-T1-GE3

Wahanga Tapeke: 113283

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 11 mOhm @ 14A, 10V,

Momotae
IRFI830GPBF
Vishay Siliconix

IRFI830GPBF

Wahanga Tapeke: 37055

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.1A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.5 Ohm @ 1.9A, 10V,

Momotae
SIE808DF-T1-GE3
Vishay Siliconix

SIE808DF-T1-GE3

Wahanga Tapeke: 35066

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 1.6 mOhm @ 25A, 10V,

Momotae
SISA01DN-T1-GE3
Vishay Siliconix

SISA01DN-T1-GE3

Wahanga Tapeke: 265

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 22.4A (Ta), 60A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 4.9 mOhm @ 15A, 10V,

Momotae
SI7390DP-T1-GE3
Vishay Siliconix

SI7390DP-T1-GE3

Wahanga Tapeke: 57373

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 9.5 mOhm @ 15A, 10V,

Momotae
SI4838DY-T1-E3
Vishay Siliconix

SI4838DY-T1-E3

Wahanga Tapeke: 52849

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 17A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 3 mOhm @ 25A, 4.5V,

Momotae
SI7862ADP-T1-GE3
Vishay Siliconix

SI7862ADP-T1-GE3

Wahanga Tapeke: 30546

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 16V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 18A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 3 mOhm @ 29A, 4.5V,

Momotae
SIRA00DP-T1-RE3
Vishay Siliconix

SIRA00DP-T1-RE3

Wahanga Tapeke: 237

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 1 mOhm @ 20A, 10V,

Momotae
SISS02DN-T1-GE3
Vishay Siliconix

SISS02DN-T1-GE3

Wahanga Tapeke: 249

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 51A (Ta), 80A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 1.2 mOhm @ 15A, 10V,

Momotae
SI7149ADP-T1-GE3
Vishay Siliconix

SI7149ADP-T1-GE3

Wahanga Tapeke: 199708

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 50A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 5.2 mOhm @ 15A, 10V,

Momotae
SIHA17N80E-E3
Vishay Siliconix

SIHA17N80E-E3

Wahanga Tapeke: 13653

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 800V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 15A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 290 mOhm @ 8.5A, 10V,

Momotae
SQM50P03-07_GE3
Vishay Siliconix

SQM50P03-07_GE3

Wahanga Tapeke: 30993

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 50A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 7 mOhm @ 30A, 10V,

Momotae
SIR182DP-T1-RE3
Vishay Siliconix

SIR182DP-T1-RE3

Wahanga Tapeke: 255

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 7.5V, 10V, Rds Kei (Max) @ Id, Vgs: 2.8 mOhm @ 15A, 10V,

Momotae
SIR140DP-T1-RE3
Vishay Siliconix

SIR140DP-T1-RE3

Wahanga Tapeke: 261

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 71.9A (Ta), 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 0.67 mOhm @ 20A, 10V,

Momotae
SI3442BDV-T1-GE3
Vishay Siliconix

SI3442BDV-T1-GE3

Wahanga Tapeke: 122281

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 57 mOhm @ 4A, 4.5V,

Momotae
SIR680DP-T1-RE3
Vishay Siliconix

SIR680DP-T1-RE3

Wahanga Tapeke: 66462

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 80V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 7.5V, 10V, Rds Kei (Max) @ Id, Vgs: 2.9 mOhm @ 20A, 10V,

Momotae
SI4838DY-T1-GE3
Vishay Siliconix

SI4838DY-T1-GE3

Wahanga Tapeke: 44771

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 17A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 3 mOhm @ 25A, 4.5V,

Momotae
SIR180DP-T1-RE3
Vishay Siliconix

SIR180DP-T1-RE3

Wahanga Tapeke: 219

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 32.4A (Ta), 60A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 7.5V, 10V, Rds Kei (Max) @ Id, Vgs: 2.05 mOhm @ 10A, 10V,

Momotae
SIR108DP-T1-RE3
Vishay Siliconix

SIR108DP-T1-RE3

Wahanga Tapeke: 232

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12.4A (Ta), 45A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 7.5V, 10V, Rds Kei (Max) @ Id, Vgs: 13.5 mOhm @ 10A, 10V,

Momotae
SIRA60DP-T1-GE3
Vishay Siliconix

SIRA60DP-T1-GE3

Wahanga Tapeke: 111133

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 0.94 mOhm @ 20A, 10V,

Momotae
SIS184DN-T1-GE3
Vishay Siliconix

SIS184DN-T1-GE3

Wahanga Tapeke: 251

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 17.4A (Ta), 65.3A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 7.5V, 10V, Rds Kei (Max) @ Id, Vgs: 5.8 mOhm @ 10A, 10V,

Momotae
SIR606BDP-T1-RE3
Vishay Siliconix

SIR606BDP-T1-RE3

Wahanga Tapeke: 296

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10.9A (Ta), 38.7A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 7.5V, 10V, Rds Kei (Max) @ Id, Vgs: 17.4 mOhm @ 10A, 10V,

Momotae
SIR668DP-T1-RE3
Vishay Siliconix

SIR668DP-T1-RE3

Wahanga Tapeke: 64154

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 95A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 7.5V, 10V, Rds Kei (Max) @ Id, Vgs: 4.8 mOhm @ 20A, 10V,

Momotae