Transistors - FETs, MOSFETs - Kotahi

Kāinga
Transistors - FETs, MOSFETs - Kotahi

Vishay Siliconix

2N6661JTXV02

Wahanga Tapeke: 1822

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 90V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 860mA (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, 10V, Rds Kei (Max) @ Id, Vgs: 4 Ohm @ 1A, 10V,

Momotae

Vishay Siliconix

2N6661JTXL02

Wahanga Tapeke: 6256

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 90V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 860mA (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, 10V, Rds Kei (Max) @ Id, Vgs: 4 Ohm @ 1A, 10V,

Momotae

Vishay Siliconix

2N6661JTVP02

Wahanga Tapeke: 1814

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 90V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 860mA (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, 10V, Rds Kei (Max) @ Id, Vgs: 4 Ohm @ 1A, 10V,

Momotae

Vishay Siliconix

2N6661JTX02

Wahanga Tapeke: 1843

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 90V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 860mA (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, 10V, Rds Kei (Max) @ Id, Vgs: 4 Ohm @ 1A, 10V,

Momotae

Vishay Siliconix

2N6661-E3

Wahanga Tapeke: 1817

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 90V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 860mA (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, 10V, Rds Kei (Max) @ Id, Vgs: 4 Ohm @ 1A, 10V,

Momotae

Vishay Siliconix

2N6661-2

Wahanga Tapeke: 1824

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 90V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 860mA (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, 10V, Rds Kei (Max) @ Id, Vgs: 4 Ohm @ 1A, 10V,

Momotae

Vishay Siliconix

2N6660JTXV02

Wahanga Tapeke: 1839

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 990mA (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, 10V, Rds Kei (Max) @ Id, Vgs: 3 Ohm @ 1A, 10V,

Momotae

Vishay Siliconix

2N6660JTXP02

Wahanga Tapeke: 1797

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 990mA (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, 10V, Rds Kei (Max) @ Id, Vgs: 3 Ohm @ 1A, 10V,

Momotae

Vishay Siliconix

2N6660JTX02

Wahanga Tapeke: 1843

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 990mA (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, 10V, Rds Kei (Max) @ Id, Vgs: 3 Ohm @ 1A, 10V,

Momotae

Vishay Siliconix

2N6660JTXL02

Wahanga Tapeke: 1782

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 990mA (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, 10V, Rds Kei (Max) @ Id, Vgs: 3 Ohm @ 1A, 10V,

Momotae

Vishay Siliconix

2N6660-E3

Wahanga Tapeke: 1842

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 990mA (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, 10V, Rds Kei (Max) @ Id, Vgs: 3 Ohm @ 1A, 10V,

Momotae

Vishay Siliconix

2N6660JTVP02

Wahanga Tapeke: 1813

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 990mA (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, 10V, Rds Kei (Max) @ Id, Vgs: 3 Ohm @ 1A, 10V,

Momotae

Vishay Siliconix

2N7002-E3

Wahanga Tapeke: 1534

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 115mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, 10V, Rds Kei (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V,

Momotae

Vishay Siliconix

2N7002E

Wahanga Tapeke: 125033

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 240mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3 Ohm @ 250mA, 10V,

Momotae

Vishay Siliconix

2N7002-T1-GE3

Wahanga Tapeke: 166741

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 115mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, 10V, Rds Kei (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V,

Momotae

Vishay Siliconix

2N6661JAN02

Wahanga Tapeke: 9463

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 90V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 860mA (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, 10V, Rds Kei (Max) @ Id, Vgs: 4 Ohm @ 1A, 10V,

Momotae

Vishay Siliconix

2N6661JTXP02

Wahanga Tapeke: 9544

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 90V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 860mA (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, 10V, Rds Kei (Max) @ Id, Vgs: 4 Ohm @ 1A, 10V,

Momotae

Vishay Siliconix

2N6660-2

Wahanga Tapeke: 9516

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 990mA (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, 10V, Rds Kei (Max) @ Id, Vgs: 3 Ohm @ 1A, 10V,

Momotae

Vishay Siliconix

2N7002E-T1-GE3

Wahanga Tapeke: 199703

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 240mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 3 Ohm @ 250mA, 10V,

Momotae

Vishay Siliconix

2N7002-T1-E3

Wahanga Tapeke: 146560

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 115mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, 10V, Rds Kei (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V,

Momotae

Vishay Siliconix

2N7002E-T1-E3

Wahanga Tapeke: 175390

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 240mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3 Ohm @ 250mA, 10V,

Momotae

Vishay Siliconix

2N7002K-T1-GE3

Wahanga Tapeke: 122158

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 300mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V,

Momotae

Vishay Siliconix

2N7002K-T1-E3

Wahanga Tapeke: 162145

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 300mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V,

Momotae

Vishay Siliconix

3N164

Wahanga Tapeke: 1783

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 50mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 20V, Rds Kei (Max) @ Id, Vgs: 300 Ohm @ 100µA, 20V,

Momotae

Vishay Siliconix

3N163-E3

Wahanga Tapeke: 1851

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 50mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 20V, Rds Kei (Max) @ Id, Vgs: 250 Ohm @ 100µA, 20V,

Momotae

Vishay Siliconix

3N163

Wahanga Tapeke: 1830

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 50mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 20V, Rds Kei (Max) @ Id, Vgs: 250 Ohm @ 100µA, 20V,

Momotae

Vishay Siliconix

3N163-2

Wahanga Tapeke: 6254

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 50mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 20V, Rds Kei (Max) @ Id, Vgs: 250 Ohm @ 100µA, 20V,

Momotae

Vishay Siliconix

BS250KL-TR1-E3

Wahanga Tapeke: 409

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 270mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V,

Momotae

Vishay Siliconix

SIHFS9N60A-GE3

Wahanga Tapeke: 106

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9.2A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 750 mOhm @ 5.5A, 10V,

Momotae

Vishay Siliconix

IRFR010TRLPBF

Wahanga Tapeke: 112484

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 50V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8.2A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 200 mOhm @ 4.6A, 10V,

Momotae

Vishay Siliconix

IRF630STRLPBF

Wahanga Tapeke: 77056

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 400 mOhm @ 5.4A, 10V,

Momotae

SIS429DNT-T1-GE3

Vishay Siliconix

SIS429DNT-T1-GE3

Wahanga Tapeke: 99

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 21 mOhm @ 10.5A, 10V,

Momotae

Vishay Siliconix

IRF840ASTRRPBF

Wahanga Tapeke: 39752

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V,

Momotae

Vishay Siliconix

IRF840LC

Wahanga Tapeke: 18635

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V,

Momotae

Vishay Siliconix

IRFI730GPBF

Wahanga Tapeke: 30867

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 400V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.7A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1 Ohm @ 2.1A, 10V,

Momotae

Vishay Siliconix

IRF610LPBF

Wahanga Tapeke: 82205

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.3A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.5 Ohm @ 2A, 10V,

Momotae

3600

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