Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: GaNFET (Gallium Nitride), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 70A (Tc), Rds Kei (Max) @ Id, Vgs: 34 mOhm @ 30A, 8V,
