Transistors - FETs, MOSFETs - Kotahi

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Transistors - FETs, MOSFETs - Kotahi

TSM120NA03CR RLG

Taiwan Semiconductor Corporation

TSM120NA03CR RLG

Wahanga Tapeke: 313

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 39A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 11.7 mOhm @ 11A, 10V,

Momotae

Taiwan Semiconductor Corporation

TSM3N100CP ROG

Wahanga Tapeke: 428

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 1000V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 6 Ohm @ 1.25A, 10V,

Momotae

TSM70N750CP ROG

Taiwan Semiconductor Corporation

TSM70N750CP ROG

Wahanga Tapeke: 379

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 700V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 750 mOhm @ 1.8A, 10V,

Momotae

TSM70N380CP ROG

Taiwan Semiconductor Corporation

TSM70N380CP ROG

Wahanga Tapeke: 417

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 700V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 380 mOhm @ 3.3A, 10V,

Momotae

Taiwan Semiconductor Corporation

TSM2308CX RFG

Wahanga Tapeke: 348

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 156 mOhm @ 3A, 10V,

Momotae

TSM60NB190CM2 RNG

Taiwan Semiconductor Corporation

TSM60NB190CM2 RNG

Wahanga Tapeke: 4266

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 18A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 190 mOhm @ 6A, 10V,

Momotae

TSM60NB150CF C0G

Taiwan Semiconductor Corporation

TSM60NB150CF C0G

Wahanga Tapeke: 1735

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 24A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 150 mOhm @ 4.3A, 10V,

Momotae

TSM100N06CZ C0G

Taiwan Semiconductor Corporation

TSM100N06CZ C0G

Wahanga Tapeke: 3101

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 6.7 mOhm @ 30A, 10V,

Momotae

Taiwan Semiconductor Corporation

TSM4424CS RVG

Wahanga Tapeke: 2677

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V,

Momotae

TSM190N08CZ C0G

Taiwan Semiconductor Corporation

TSM190N08CZ C0G

Wahanga Tapeke: 4233

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 75V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 190A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 4.2 mOhm @ 90A, 10V,

Momotae

TSM60NB041PW C1G

Taiwan Semiconductor Corporation

TSM60NB041PW C1G

Wahanga Tapeke: 3156

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 78A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 41 mOhm @ 21.7A, 10V,

Momotae

Taiwan Semiconductor Corporation

TSM80N08CZ C0G

Wahanga Tapeke: 4592

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 75V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 8 mOhm @ 40A, 10V,

Momotae

Taiwan Semiconductor Corporation

TSM3N80CZ C0G

Wahanga Tapeke: 5304

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 800V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 4.2 Ohm @ 1.5A, 10V,

Momotae

Taiwan Semiconductor Corporation

TSM4NB60CI C0G

Wahanga Tapeke: 5085

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 2.5 Ohm @ 2A, 10V,

Momotae

Taiwan Semiconductor Corporation

TSM7NC60CF C0G

Wahanga Tapeke: 5368

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.2 Ohm @ 2A, 10V,

Momotae

Taiwan Semiconductor Corporation

TSM8N80CZ C0G

Wahanga Tapeke: 5368

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 800V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.05 Ohm @ 4A, 10V,

Momotae

TSM60NB260CI C0G

Taiwan Semiconductor Corporation

TSM60NB260CI C0G

Wahanga Tapeke: 5139

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 13A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 260 mOhm @ 3.9A, 10V,

Momotae

TSM60NB099CZ C0G

Taiwan Semiconductor Corporation

TSM60NB099CZ C0G

Wahanga Tapeke: 4373

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 38A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 99 mOhm @ 11.3A, 10V,

Momotae

Taiwan Semiconductor Corporation

TSM9N90ECZ C0G

Wahanga Tapeke: 5238

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 900V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.4 Ohm @ 4.5A, 10V,

Momotae

Taiwan Semiconductor Corporation

TSM15N50CZ C0G

Wahanga Tapeke: 5115

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 14A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 440 mOhm @ 7A, 10V,

Momotae

Taiwan Semiconductor Corporation

TSM4N90CZ C0G

Wahanga Tapeke: 5357

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 900V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 4 Ohm @ 2A, 10V,

Momotae

Taiwan Semiconductor Corporation

TSM4N80CZ C0G

Wahanga Tapeke: 5244

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 800V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 3 Ohm @ 1.2A, 10V,

Momotae

Taiwan Semiconductor Corporation

TSM10N80CZ C0G

Wahanga Tapeke: 5325

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 800V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.05 Ohm @ 4.75A, 10V,

Momotae

Taiwan Semiconductor Corporation

TSM4425CS RLG

Wahanga Tapeke: 6339

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 12 mOhm @ 11A, 10V,

Momotae

TSM10NC65CF C0G

Taiwan Semiconductor Corporation

TSM10NC65CF C0G

Wahanga Tapeke: 4964

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 900 mOhm @ 2A, 10V,

Momotae

Taiwan Semiconductor Corporation

TSM5NC50CZ C0G

Wahanga Tapeke: 5244

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.38 Ohm @ 2.5A, 10V,

Momotae

TSM60NB380CF C0G

Taiwan Semiconductor Corporation

TSM60NB380CF C0G

Wahanga Tapeke: 5263

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 380 mOhm @ 2.7A, 10V,

Momotae

Taiwan Semiconductor Corporation

TSM4NB65CI C0G

Wahanga Tapeke: 5335

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 3.37 Ohm @ 2A, 10V,

Momotae

TSM70N600CH C5G

Taiwan Semiconductor Corporation

TSM70N600CH C5G

Wahanga Tapeke: 4269

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 700V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 600 mOhm @ 4A, 10V,

Momotae

Taiwan Semiconductor Corporation

TSM7N90CZ C0G

Wahanga Tapeke: 5235

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 900V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.9 Ohm @ 3.5A, 10V,

Momotae

Taiwan Semiconductor Corporation

TSM15N50CI C0G

Wahanga Tapeke: 5196

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 14A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 440 mOhm @ 7A, 10V,

Momotae

TSM80N950CI C0G

Taiwan Semiconductor Corporation

TSM80N950CI C0G

Wahanga Tapeke: 5392

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 800V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 950 mOhm @ 2A, 10V,

Momotae

TSM60N380CI C0G

Taiwan Semiconductor Corporation

TSM60N380CI C0G

Wahanga Tapeke: 5213

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V,

Momotae

Taiwan Semiconductor Corporation

TSM85N10CZ C0G

Wahanga Tapeke: 4800

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 81A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 10 mOhm @ 40A, 10V,

Momotae

Taiwan Semiconductor Corporation

TSM9N90ECI C0G

Wahanga Tapeke: 5150

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 900V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.4 Ohm @ 4.5A, 10V,

Momotae

Taiwan Semiconductor Corporation

TSM8N80CI C0G

Wahanga Tapeke: 4380

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 800V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.05 Ohm @ 4A, 10V,

Momotae

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