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Transistors - FETs, MOSFETs - Kotahi

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  • Transistors - FETs, MOSFETs - Kotahi
NP15P06SLG-E1-AY
Renesas Electronics America

NP15P06SLG-E1-AY

Wahanga Tapeke: 1126

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 15A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 70 mOhm @ 7.5A, 10V,

Momotae
NP74N04YUG-E1-AY
Renesas Electronics America

NP74N04YUG-E1-AY

Wahanga Tapeke: 1233

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 75A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 5.5 mOhm @ 37.5A, 10V,

Momotae
NP75P04YLG-E1-AY
Renesas Electronics America

NP75P04YLG-E1-AY

Wahanga Tapeke: 1153

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 75A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, 10V, Rds Kei (Max) @ Id, Vgs: 9.7 mOhm @ 37.5A, 10V,

Momotae
NP80N055MHE-S18-AY
Renesas Electronics America

NP80N055MHE-S18-AY

Wahanga Tapeke: 1152

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 11 mOhm @ 40A, 10V,

Momotae
NP80N055NDG-S18-AY
Renesas Electronics America

NP80N055NDG-S18-AY

Wahanga Tapeke: 1173

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6.9 mOhm @ 40A, 10V,

Momotae
NP100P06PLG-E1-AY
Renesas Electronics America

NP100P06PLG-E1-AY

Wahanga Tapeke: 1204

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6 mOhm @ 50A, 10V,

Momotae
NP36P04KDG-E1-AY
Renesas Electronics America

NP36P04KDG-E1-AY

Wahanga Tapeke: 1151

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 36A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 17 mOhm @ 18A, 10V,

Momotae
NP160N04TDG-E1-AY
Renesas Electronics America

NP160N04TDG-E1-AY

Wahanga Tapeke: 1181

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 160A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 2 mOhm @ 80A, 10V,

Momotae
RJK0353DPA-01#J0B
Renesas Electronics America

RJK0353DPA-01#J0B

Wahanga Tapeke: 164042

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 35A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 5.2 mOhm @ 17.5A, 10V,

Momotae
RJK0851DPB-00#J5
Renesas Electronics America

RJK0851DPB-00#J5

Wahanga Tapeke: 125161

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 80V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 23 mOhm @ 10A, 10V,

Momotae
NP160N055TUJ-E1-AY
Renesas Electronics America

NP160N055TUJ-E1-AY

Wahanga Tapeke: 1194

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 160A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 3 mOhm @ 80A, 10V,

Momotae
NP80N055KLE-E1-AY
Renesas Electronics America

NP80N055KLE-E1-AY

Wahanga Tapeke: 1211

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 11 mOhm @ 40A, 10V,

Momotae
NP160N04TUJ-E1-AY
Renesas Electronics America

NP160N04TUJ-E1-AY

Wahanga Tapeke: 6194

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 160A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 2 mOhm @ 80A, 10V,

Momotae
NP60N04MUG-S18-AY
Renesas Electronics America

NP60N04MUG-S18-AY

Wahanga Tapeke: 1119

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 6.3 mOhm @ 30A, 10V,

Momotae
NP180N04TUJ-E1-AY
Renesas Electronics America

NP180N04TUJ-E1-AY

Wahanga Tapeke: 1197

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 180A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.5 mOhm @ 90A, 10V,

Momotae
NP60N03SUG-E1-AY
Renesas Electronics America

NP60N03SUG-E1-AY

Wahanga Tapeke: 1234

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 3.8 mOhm @ 30A, 10V,

Momotae
NP88N075KUE-E1-AY
Renesas Electronics America

NP88N075KUE-E1-AY

Wahanga Tapeke: 1209

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 75V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 88A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 8.5 mOhm @ 44A, 10V,

Momotae
NP36P04SDG-E1-AY
Renesas Electronics America

NP36P04SDG-E1-AY

Wahanga Tapeke: 1154

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 36A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 17 mOhm @ 18A, 10V,

Momotae
RJK6024DPD-00#J2
Renesas Electronics America

RJK6024DPD-00#J2

Wahanga Tapeke: 1206

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 400mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 42 Ohm @ 200mA, 10V,

Momotae
NP34N055SLE-E1-AY
Renesas Electronics America

NP34N055SLE-E1-AY

Wahanga Tapeke: 1144

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 34A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 18 mOhm @ 17A, 10V,

Momotae
NP180N055TUJ-E1-AY
Renesas Electronics America

NP180N055TUJ-E1-AY

Wahanga Tapeke: 6170

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 180A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 2.3 mOhm @ 90A, 10V,

Momotae
RJK0451DPB-00#J5
Renesas Electronics America

RJK0451DPB-00#J5

Wahanga Tapeke: 125147

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 35A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 7 mOhm @ 17.5A, 10V,

Momotae
NP88N04NUG-S18-AY
Renesas Electronics America

NP88N04NUG-S18-AY

Wahanga Tapeke: 1135

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 88A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 3.4 mOhm @ 44A, 10V,

Momotae
NP50P04KDG-E1-AY
Renesas Electronics America

NP50P04KDG-E1-AY

Wahanga Tapeke: 1131

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 50A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 10 mOhm @ 25A, 10V,

Momotae
NP82N04NUG-S18-AY
Renesas Electronics America

NP82N04NUG-S18-AY

Wahanga Tapeke: 1158

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 82A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 4.2 mOhm @ 41A, 10V,

Momotae
NP35N04YUG-E1-AY
Renesas Electronics America

NP35N04YUG-E1-AY

Wahanga Tapeke: 1203

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 35A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 10 mOhm @ 17.5A, 10V,

Momotae
NP55N03SUG-E1-AY
Renesas Electronics America

NP55N03SUG-E1-AY

Wahanga Tapeke: 1169

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 55A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 5 mOhm @ 28A, 10V,

Momotae
NP80N06MLG-S18-AY
Renesas Electronics America

NP80N06MLG-S18-AY

Wahanga Tapeke: 6116

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 8.6 mOhm @ 40A, 10V,

Momotae
NP32N055SLE-E1-AY
Renesas Electronics America

NP32N055SLE-E1-AY

Wahanga Tapeke: 1182

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 32A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 24 mOhm @ 16A, 10V,

Momotae
NP36P06SLG-E1-AY
Renesas Electronics America

NP36P06SLG-E1-AY

Wahanga Tapeke: 1185

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 36A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 30 mOhm @ 18A, 10V,

Momotae
NP82N04PDG-E1-AY
Renesas Electronics America

NP82N04PDG-E1-AY

Wahanga Tapeke: 1131

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 82A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.5 mOhm @ 41A, 10V,

Momotae
NP100P04PLG-E1-AY
Renesas Electronics America

NP100P04PLG-E1-AY

Wahanga Tapeke: 1193

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.7 mOhm @ 50A, 10V,

Momotae
NP100P04PDG-E1-AY
Renesas Electronics America

NP100P04PDG-E1-AY

Wahanga Tapeke: 24318

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.5 mOhm @ 50A, 10V,

Momotae
NP22N055SLE-E1-AY
Renesas Electronics America

NP22N055SLE-E1-AY

Wahanga Tapeke: 1154

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 22A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 37 mOhm @ 11A, 10V,

Momotae
NP80N06PLG-E1B-AY
Renesas Electronics America

NP80N06PLG-E1B-AY

Wahanga Tapeke: 1172

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 8.3 mOhm @ 40A, 10V,

Momotae
NP50P03YDG-E1-AY
Renesas Electronics America

NP50P03YDG-E1-AY

Wahanga Tapeke: 1191

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 50A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, 10V, Rds Kei (Max) @ Id, Vgs: 8.4 mOhm @ 25A, 10V,

Momotae