Transistors - FETs, MOSFETs - Huinga

QJD1210010

Wahanga Tapeke: 2869

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Silicon Carbide (SiC), Tohaina ki te Hiko Puna (Vdss): 1200V (1.2kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100A (Tc), Rds Kei (Max) @ Id, Vgs: 25 mOhm @ 100A, 20V, Vgs (th) (Max) @ Id: 5V @ 10mA,

QJD1210SA1

Wahanga Tapeke: 2941

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 1200V (1.2kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100A, Rds Kei (Max) @ Id, Vgs: 17 mOhm @ 100A, 15V, Vgs (th) (Max) @ Id: 1.6V @ 34mA,

QJD1210SA2

Wahanga Tapeke: 2896

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 1200V (1.2kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100A, Rds Kei (Max) @ Id, Vgs: 17 mOhm @ 100A, 15V, Vgs (th) (Max) @ Id: 1.6V @ 34mA,

QJD1210SB1

Wahanga Tapeke: 2931

QJD1210011

Wahanga Tapeke: 3308

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Silicon Carbide (SiC), Tohaina ki te Hiko Puna (Vdss): 1200V (1.2kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100A (Tc), Rds Kei (Max) @ Id, Vgs: 25 mOhm @ 100A, 20V, Vgs (th) (Max) @ Id: 5V @ 10mA,