Menu
MaoriMaori
Rfqs / ota
0Rfqs / ota

Optoisolators - Transistor, Putanga Whakaahua

  • Kāinga
  •  
  • Optoisolators - Transistor, Putanga Whakaahua
HMA2701BV
ON Semiconductor

HMA2701BV

Wahanga Tapeke: 5399

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 80% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 160% @ 5mA, Whakatika / Wa Hinga (Momo): 3µs, 3µs,

Momotae
H11G2300W
ON Semiconductor

H11G2300W

Wahanga Tapeke: 5316

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5300Vrms, Ratio Whakawhiti Onaianei (Min): 1000% @ 10mA, Whakakā / Weto Weto (Patohia): 5µs, 100µs,

Momotae
HCPL2530WV
ON Semiconductor

HCPL2530WV

Wahanga Tapeke: 5378

Tuhinga o mua: 2, Ngaohiko - Motuhotu: 2500Vrms, Ratio Whakawhiti Onaianei (Min): 7% @ 16mA, Te Whakatauranga Whakawhiti Onaianei (Max): 50% @ 16mA, Whakakā / Weto Weto (Patohia): 450ns, 500ns,

Momotae
MCT2SR2VM
ON Semiconductor

MCT2SR2VM

Wahanga Tapeke: 5350

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 7500Vpk, Ratio Whakawhiti Onaianei (Min): 20% @ 10mA, Whakakā / Weto Weto (Patohia): 2µs, 2µs, Whakatika / Wa Hinga (Momo): 2µs, 1.5µs,

Momotae
MOC208R2M
ON Semiconductor

MOC208R2M

Wahanga Tapeke: 5285

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 2500Vrms, Ratio Whakawhiti Onaianei (Min): 40% @ 10mA, Te Whakatauranga Whakawhiti Onaianei (Max): 125% @ 10mA, Whakakā / Weto Weto (Patohia): 7.5µs, 5.7µs, Whakatika / Wa Hinga (Momo): 3.2µs, 4.7µs,

Momotae
CNX35U300W
ON Semiconductor

CNX35U300W

Wahanga Tapeke: 2576

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5300Vrms, Ratio Whakawhiti Onaianei (Min): 40% @ 10mA, Te Whakatauranga Whakawhiti Onaianei (Max): 160% @ 10mA, Whakakā / Weto Weto (Patohia): 20µs, 20µs,

Momotae
CNY17F3
ON Semiconductor

CNY17F3

Wahanga Tapeke: 5343

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5300Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 10mA, Te Whakatauranga Whakawhiti Onaianei (Max): 200% @ 10mA, Whakakā / Weto Weto (Patohia): 2µs, 3µs, Whakatika / Wa Hinga (Momo): 1µs, 2µs,

Momotae
H11AV2TM
ON Semiconductor

H11AV2TM

Wahanga Tapeke: 5264

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 7500Vpk, Ratio Whakawhiti Onaianei (Min): 50% @ 10mA,

Momotae
MOC81063S
ON Semiconductor

MOC81063S

Wahanga Tapeke: 2596

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5300Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 10mA, Te Whakatauranga Whakawhiti Onaianei (Max): 150% @ 10mA, Whakakā / Weto Weto (Patohia): 2µs, 3µs, Whakatika / Wa Hinga (Momo): 1µs, 2µs,

Momotae
H11A817D300W
ON Semiconductor

H11A817D300W

Wahanga Tapeke: 5432

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5300Vrms, Ratio Whakawhiti Onaianei (Min): 300% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakatika / Wa Hinga (Momo): 2.4µs, 2.4µs,

Momotae
FOD050LR1
ON Semiconductor

FOD050LR1

Wahanga Tapeke: 5416

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 2500Vrms, Ratio Whakawhiti Onaianei (Min): 15% @ 16mA, Te Whakatauranga Whakawhiti Onaianei (Max): 50% @ 16mA, Whakakā / Weto Weto (Patohia): 1µs, 1µs (Max),

Momotae
HMA121CR1V
ON Semiconductor

HMA121CR1V

Wahanga Tapeke: 5282

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 200% @ 5mA, Whakatika / Wa Hinga (Momo): 3µs, 3µs,

Momotae
H11A3SVM
ON Semiconductor

H11A3SVM

Wahanga Tapeke: 2603

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 7500Vpk, Ratio Whakawhiti Onaianei (Min): 20% @ 10mA, Whakakā / Weto Weto (Patohia): 2µs, 2µs,

Momotae
HMA124R4V
ON Semiconductor

HMA124R4V

Wahanga Tapeke: 5466

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 1mA, Te Whakatauranga Whakawhiti Onaianei (Max): 1200% @ 1mA, Whakatika / Wa Hinga (Momo): 3µs, 3µs,

Momotae
MOC8101300W
ON Semiconductor

MOC8101300W

Wahanga Tapeke: 5279

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5300Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 10mA, Te Whakatauranga Whakawhiti Onaianei (Max): 80% @ 10mA, Whakakā / Weto Weto (Patohia): 2µs, 3µs, Whakatika / Wa Hinga (Momo): 1µs, 2µs,

Momotae
H11AG1300W
ON Semiconductor

H11AG1300W

Wahanga Tapeke: 5444

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5300Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 1mA, Whakakā / Weto Weto (Patohia): 5µs, 5µs,

Momotae
FOD073L
ON Semiconductor

FOD073L

Wahanga Tapeke: 51781

Tuhinga o mua: 2, Ngaohiko - Motuhotu: 2500Vrms, Ratio Whakawhiti Onaianei (Min): 400% @ 500µA, Te Whakatauranga Whakawhiti Onaianei (Max): 7000% @ 500µA, Whakakā / Weto Weto (Patohia): 5µs, 25µs,

Momotae
MOC8100VM
ON Semiconductor

MOC8100VM

Wahanga Tapeke: 5467

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 7500Vpk, Ratio Whakawhiti Onaianei (Min): 30% @ 1mA, Whakakā / Weto Weto (Patohia): 20µs, 20µs (Max), Whakatika / Wa Hinga (Momo): 2µs, 2µs,

Momotae
CNW139
ON Semiconductor

CNW139

Wahanga Tapeke: 5410

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 1000Vrms, Ratio Whakawhiti Onaianei (Min): 500% @ 1.6mA,

Momotae
HMAA2705R2V
ON Semiconductor

HMAA2705R2V

Wahanga Tapeke: 5445

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 300% @ 5mA, Whakatika / Wa Hinga (Momo): 3µs, 3µs,

Momotae
FOD2742CR2
ON Semiconductor

FOD2742CR2

Wahanga Tapeke: 5533

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 2500Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 10mA, Te Whakatauranga Whakawhiti Onaianei (Max): 200% @ 10mA,

Momotae
HMHAA280R1
ON Semiconductor

HMHAA280R1

Wahanga Tapeke: 5270

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakatika / Wa Hinga (Momo): 3µs, 3µs,

Momotae
H11B8153S
ON Semiconductor

H11B8153S

Wahanga Tapeke: 5398

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5000Vrms, Ratio Whakawhiti Onaianei (Min): 600% @ 1mA, Te Whakatauranga Whakawhiti Onaianei (Max): 7500% @ 1mA, Whakatika / Wa Hinga (Momo): 300µs, 250µs (Max),

Momotae
H11A817A3SD
ON Semiconductor

H11A817A3SD

Wahanga Tapeke: 5268

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5300Vrms, Ratio Whakawhiti Onaianei (Min): 80% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 160% @ 5mA, Whakatika / Wa Hinga (Momo): 2.4µs, 2.4µs,

Momotae
H11AA3SR2M
ON Semiconductor

H11AA3SR2M

Wahanga Tapeke: 5428

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 7500Vpk, Ratio Whakawhiti Onaianei (Min): 50% @ 10mA,

Momotae
H11D33S
ON Semiconductor

H11D33S

Wahanga Tapeke: 5416

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5300Vrms, Ratio Whakawhiti Onaianei (Min): 20% @ 10mA, Whakakā / Weto Weto (Patohia): 5µs, 5µs,

Momotae
CNW82300
ON Semiconductor

CNW82300

Wahanga Tapeke: 5428

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5900Vrms, Ratio Whakawhiti Onaianei (Min): 0.4% @ 10mA,

Momotae
MOC211VM
ON Semiconductor

MOC211VM

Wahanga Tapeke: 116334

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 2500Vrms, Ratio Whakawhiti Onaianei (Min): 20% @ 10mA, Whakakā / Weto Weto (Patohia): 7.5µs, 5.7µs, Whakatika / Wa Hinga (Momo): 3.2µs, 4.7µs,

Momotae
H11AA3S
ON Semiconductor

H11AA3S

Wahanga Tapeke: 5489

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5300Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 10mA,

Momotae
HCPL2503SV
ON Semiconductor

HCPL2503SV

Wahanga Tapeke: 5294

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 2500Vrms, Ratio Whakawhiti Onaianei (Min): 12% @ 16mA, Whakakā / Weto Weto (Patohia): 450ns, 300ns,

Momotae
MOC8100FVM
ON Semiconductor

MOC8100FVM

Wahanga Tapeke: 5383

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 7500Vpk, Ratio Whakawhiti Onaianei (Min): 30% @ 1mA, Whakakā / Weto Weto (Patohia): 20µs, 20µs (Max), Whakatika / Wa Hinga (Momo): 2µs, 2µs,

Momotae
FOD617C300W
ON Semiconductor

FOD617C300W

Wahanga Tapeke: 2614

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5000Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 10mA, Te Whakatauranga Whakawhiti Onaianei (Max): 200% @ 10mA, Whakatika / Wa Hinga (Momo): 4µs, 3µs,

Momotae
MOC81113SD
ON Semiconductor

MOC81113SD

Wahanga Tapeke: 5287

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5300Vrms, Ratio Whakawhiti Onaianei (Min): 20% @ 10mA, Whakakā / Weto Weto (Patohia): 3µs, 18µs, Whakatika / Wa Hinga (Momo): 2µs, 11µs,

Momotae
MOC8113300
ON Semiconductor

MOC8113300

Wahanga Tapeke: 5338

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5300Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 10mA, Whakakā / Weto Weto (Patohia): 4.2µs, 23µs, Whakatika / Wa Hinga (Momo): 3µs, 14µs,

Momotae
H11AA2S
ON Semiconductor

H11AA2S

Wahanga Tapeke: 5280

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5300Vrms, Ratio Whakawhiti Onaianei (Min): 10% @ 10mA,

Momotae
H11A3VM
ON Semiconductor

H11A3VM

Wahanga Tapeke: 5500

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 7500Vpk, Ratio Whakawhiti Onaianei (Min): 20% @ 10mA, Whakakā / Weto Weto (Patohia): 2µs, 2µs,

Momotae