Menu
MaoriMaori
Rfqs / ota
0Rfqs / ota

Transistors - FETs, MOSFETs - Kotahi

  • Kāinga
  •  
  • Transistors - FETs, MOSFETs - Kotahi
FQB85N06TM_AM002
ON Semiconductor

FQB85N06TM_AM002

Wahanga Tapeke: 10033

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 85A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 10 mOhm @ 42.5A, 10V,

Momotae
FQAF14N30
ON Semiconductor

FQAF14N30

Wahanga Tapeke: 9979

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 300V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11.4A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 290 mOhm @ 5.7A, 10V,

Momotae
FQU2N100TU
ON Semiconductor

FQU2N100TU

Wahanga Tapeke: 163823

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 1000V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.6A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 9 Ohm @ 800mA, 10V,

Momotae
NTB65N02RG
ON Semiconductor

NTB65N02RG

Wahanga Tapeke: 316

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 65A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 8.2 mOhm @ 30A, 10V,

Momotae
NTB45N06LG
ON Semiconductor

NTB45N06LG

Wahanga Tapeke: 345

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 45A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, Rds Kei (Max) @ Id, Vgs: 28 mOhm @ 22.5A, 5V,

Momotae
FDMS8660S
ON Semiconductor

FDMS8660S

Wahanga Tapeke: 153

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 25A (Ta), 40A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 2.4 mOhm @ 25A, 10V,

Momotae
FDD8778
ON Semiconductor

FDD8778

Wahanga Tapeke: 158603

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 35A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 14 mOhm @ 35A, 10V,

Momotae
FQH70N10
ON Semiconductor

FQH70N10

Wahanga Tapeke: 10023

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 70A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 23 mOhm @ 35A, 10V,

Momotae
FCH041N65EFL4
ON Semiconductor

FCH041N65EFL4

Wahanga Tapeke: 6453

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 76A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 41 mOhm @ 38A, 10V,

Momotae
NTB13N10
ON Semiconductor

NTB13N10

Wahanga Tapeke: 330

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 13A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 165 mOhm @ 6.5A, 10V,

Momotae
HUFA76445S3S
ON Semiconductor

HUFA76445S3S

Wahanga Tapeke: 12

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 75A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6.5 mOhm @ 75A, 10V,

Momotae
HUFA76633S3ST
ON Semiconductor

HUFA76633S3ST

Wahanga Tapeke: 10020

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 39A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 35 mOhm @ 39A, 10V,

Momotae
FDPF15N65
ON Semiconductor

FDPF15N65

Wahanga Tapeke: 22631

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 15A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 440 mOhm @ 7.5A, 10V,

Momotae
FQA55N10
ON Semiconductor

FQA55N10

Wahanga Tapeke: 6052

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 61A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 26 mOhm @ 30.5A, 10V,

Momotae
NTD23N03RG
ON Semiconductor

NTD23N03RG

Wahanga Tapeke: 317

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.8A (Ta), 17.1A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4V, 5V, Rds Kei (Max) @ Id, Vgs: 45 mOhm @ 6A, 10V,

Momotae
IRFP460C
ON Semiconductor

IRFP460C

Wahanga Tapeke: 6015

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 240 mOhm @ 10A, 10V,

Momotae
RFP50N05L
ON Semiconductor

RFP50N05L

Wahanga Tapeke: 10060

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 50V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 50A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4V, 5V, Rds Kei (Max) @ Id, Vgs: 22 mOhm @ 50A, 5V,

Momotae
NTD3055-150-1G
ON Semiconductor

NTD3055-150-1G

Wahanga Tapeke: 358

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 150 mOhm @ 4.5A, 10V,

Momotae
FQU5N50CTU-WS
ON Semiconductor

FQU5N50CTU-WS

Wahanga Tapeke: 16698

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 10V,

Momotae
FQA6N70
ON Semiconductor

FQA6N70

Wahanga Tapeke: 10011

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 700V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.4A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.5 Ohm @ 3.2A, 10V,

Momotae
NTB30N06T4G
ON Semiconductor

NTB30N06T4G

Wahanga Tapeke: 323

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 27A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 42 mOhm @ 15A, 10V,

Momotae
FQPF7N80
ON Semiconductor

FQPF7N80

Wahanga Tapeke: 9996

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 800V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.8A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.5 Ohm @ 1.9A, 10V,

Momotae
FQPF34N20
ON Semiconductor

FQPF34N20

Wahanga Tapeke: 10011

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 17.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 75 mOhm @ 8.75A, 10V,

Momotae
ISL9N302AS3ST
ON Semiconductor

ISL9N302AS3ST

Wahanga Tapeke: 29

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 75A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 2.3 mOhm @ 75A, 10V,

Momotae
NTD110N02R-001G
ON Semiconductor

NTD110N02R-001G

Wahanga Tapeke: 294

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 24V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12.5A (Ta), 110A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 4.6 mOhm @ 20A, 10V,

Momotae
FQP5N90
ON Semiconductor

FQP5N90

Wahanga Tapeke: 10028

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 900V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.4A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 2.3 Ohm @ 2.7A, 10V,

Momotae
NTB5605PG
ON Semiconductor

NTB5605PG

Wahanga Tapeke: 254

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 18.5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, Rds Kei (Max) @ Id, Vgs: 140 mOhm @ 8.5A, 5V,

Momotae
FQAF8N80
ON Semiconductor

FQAF8N80

Wahanga Tapeke: 10004

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 800V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.9A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.2 Ohm @ 2.95A, 10V,

Momotae
FQAF47P06
ON Semiconductor

FQAF47P06

Wahanga Tapeke: 6052

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 38A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 26 mOhm @ 19A, 10V,

Momotae
FQAF15N70
ON Semiconductor

FQAF15N70

Wahanga Tapeke: 108

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 700V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 560 mOhm @ 4.8A, 10V,

Momotae
FQPF33N10L
ON Semiconductor

FQPF33N10L

Wahanga Tapeke: 47250

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 18A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, 10V, Rds Kei (Max) @ Id, Vgs: 52 mOhm @ 9A, 10V,

Momotae
FQB12N60CTM
ON Semiconductor

FQB12N60CTM

Wahanga Tapeke: 10055

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 650 mOhm @ 6A, 10V,

Momotae
FDU8782
ON Semiconductor

FDU8782

Wahanga Tapeke: 70

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 35A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 11 mOhm @ 35A, 10V,

Momotae
FDP16N50
ON Semiconductor

FDP16N50

Wahanga Tapeke: 66

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 16A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 380 mOhm @ 8A, 10V,

Momotae
HUFA76639S3ST
ON Semiconductor

HUFA76639S3ST

Wahanga Tapeke: 10052

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 51A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 26 mOhm @ 51A, 10V,

Momotae
NTMFS4C06NT3G
ON Semiconductor

NTMFS4C06NT3G

Wahanga Tapeke: 184012

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A (Ta), 69A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 4 mOhm @ 30A, 10V,

Momotae