Transistors - FETs, MOSFETs - Kotahi

LSIC1MO120E0080

LSIC1MO120E0080

Wahanga Tapeke: 1259

Momo FET: N-Channel, Hangarau: SiCFET (Silicon Carbide), Tohaina ki te Hiko Puna (Vdss): 1200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 39A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 20V, Rds Kei (Max) @ Id, Vgs: 100 mOhm @ 20A, 20V,

Momotae
LSIC1MO120E0160

LSIC1MO120E0160

Wahanga Tapeke: 1034

Momo FET: N-Channel, Hangarau: SiCFET (Silicon Carbide), Tohaina ki te Hiko Puna (Vdss): 1200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 22A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 20V, Rds Kei (Max) @ Id, Vgs: 200 mOhm @ 10A, 20V,

Momotae
LSIC1MO120E0120

LSIC1MO120E0120

Wahanga Tapeke: 1693

Momo FET: N-Channel, Hangarau: SiCFET (Silicon Carbide), Tohaina ki te Hiko Puna (Vdss): 1200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 27A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 20V, Rds Kei (Max) @ Id, Vgs: 150 mOhm @ 14A, 20V,

Momotae