Wahanga Tapeke: 1259
Momo FET: N-Channel, Hangarau: SiCFET (Silicon Carbide), Tohaina ki te Hiko Puna (Vdss): 1200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 39A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 20V, Rds Kei (Max) @ Id, Vgs: 100 mOhm @ 20A, 20V,