Wahanga Tapeke: 224
Momo FET: N-Channel, Hangarau: SiC (Silicon Carbide Junction Transistor), Tohaina ki te Hiko Puna (Vdss): 1200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 48A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 20V, Rds Kei (Max) @ Id, Vgs: 52 mOhm @ 40A, 20V,