Transistors - FETs, MOSFETs - Kotahi

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Transistors - FETs, MOSFETs - Kotahi

Infineon Technologies

IPI09N03LA

Wahanga Tapeke: 123

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 50A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 9.2 mOhm @ 30A, 10V,

Momotae

Infineon Technologies

SPP80N04S2-04

Wahanga Tapeke: 234

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 3.7 mOhm @ 80A, 10V,

Momotae

SPB07N60S5ATMA1

Infineon Technologies

SPB07N60S5ATMA1

Wahanga Tapeke: 236

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.3A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V,

Momotae

Infineon Technologies

IPP80N06S3-05

Wahanga Tapeke: 156

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 5.4 mOhm @ 63A, 10V,

Momotae

SPB100N03S2L-03 G

Infineon Technologies

SPB100N03S2L-03 G

Wahanga Tapeke: 131

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 2.7 mOhm @ 80A, 10V,

Momotae

Infineon Technologies

SPD04N50C3T

Wahanga Tapeke: 107

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 560V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 950 mOhm @ 2.8A, 10V,

Momotae

IPD35N12S3L24ATMA1

Infineon Technologies

IPD35N12S3L24ATMA1

Wahanga Tapeke: 153927

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 120V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 35A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 24 mOhm @ 35A, 10V,

Momotae

Infineon Technologies

IPI14N03LA

Wahanga Tapeke: 196

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 30A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 13.9 mOhm @ 30A, 10V,

Momotae

Infineon Technologies

IPBH6N03LA G

Wahanga Tapeke: 264

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 50A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6.2 mOhm @ 50A, 10V,

Momotae

Infineon Technologies

SPB21N10 G

Wahanga Tapeke: 182

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 21A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 80 mOhm @ 15A, 10V,

Momotae

IPP100N06S3L-04

Infineon Technologies

IPP100N06S3L-04

Wahanga Tapeke: 190

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.8 mOhm @ 80A, 10V,

Momotae

Infineon Technologies

IRF6635TR1PBF

Wahanga Tapeke: 120

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 32A (Ta), 180A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 1.8 mOhm @ 32A, 10V,

Momotae

Infineon Technologies

IRF6641TR1PBF

Wahanga Tapeke: 262

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.6A (Ta), 26A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 59.9 mOhm @ 5.5A, 10V,

Momotae

Infineon Technologies

SN7002N E6433

Wahanga Tapeke: 142

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 200mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V,

Momotae

Infineon Technologies

SPD07N60C3T

Wahanga Tapeke: 100

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.3A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V,

Momotae

IPP100N06S3L-03

Infineon Technologies

IPP100N06S3L-03

Wahanga Tapeke: 140

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, 10V, Rds Kei (Max) @ Id, Vgs: 3 mOhm @ 80A, 10V,

Momotae

Infineon Technologies

IPS09N03LA G

Wahanga Tapeke: 177

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 50A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 8.8 mOhm @ 30A, 10V,

Momotae

Infineon Technologies

SPI21N10

Wahanga Tapeke: 230

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 21A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 80 mOhm @ 15A, 10V,

Momotae

Infineon Technologies

SPI80N04S2-04

Wahanga Tapeke: 222

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 3.7 mOhm @ 80A, 10V,

Momotae

Infineon Technologies

SPI80N06S2-08

Wahanga Tapeke: 290

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 8 mOhm @ 58A, 10V,

Momotae

Infineon Technologies

IPU05N03LA

Wahanga Tapeke: 135

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 50A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 5.3 mOhm @ 30A, 10V,

Momotae

Infineon Technologies

SPI80N03S2L-05

Wahanga Tapeke: 270

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 5.2 mOhm @ 55A, 10V,

Momotae

SPB100N08S2L-07

Infineon Technologies

SPB100N08S2L-07

Wahanga Tapeke: 214

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 75V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6.5 mOhm @ 68A, 10V,

Momotae

Infineon Technologies

SPP80N08S2-07

Wahanga Tapeke: 221

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 75V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 7.4 mOhm @ 66A, 10V,

Momotae

Infineon Technologies

IPP13N03LB G

Wahanga Tapeke: 5659

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 30A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 12.8 mOhm @ 30A, 10V,

Momotae

SPP80N06S08AKSA1

Infineon Technologies

SPP80N06S08AKSA1

Wahanga Tapeke: 43841

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 8 mOhm @ 80A, 10V,

Momotae

Infineon Technologies

SPP100N04S2-04

Wahanga Tapeke: 285

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 3.6 mOhm @ 80A, 10V,

Momotae

Infineon Technologies

SPI42N03S2L-13

Wahanga Tapeke: 249

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 42A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 12.9 mOhm @ 21A, 10V,

Momotae

SPD02N60S5BTMA1

Infineon Technologies

SPD02N60S5BTMA1

Wahanga Tapeke: 283

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.8A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 3 Ohm @ 1.1A, 10V,

Momotae

Infineon Technologies

SPD07N20

Wahanga Tapeke: 6086

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 400 mOhm @ 4.5A, 10V,

Momotae

Infineon Technologies

SPU07N60S5

Wahanga Tapeke: 307

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.3A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V,

Momotae

SPN02N60C3 E6433

Infineon Technologies

SPN02N60C3 E6433

Wahanga Tapeke: 272

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 400mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 2.5 Ohm @ 1.1A, 10V,

Momotae

Infineon Technologies

SPI80N08S2-07

Wahanga Tapeke: 278

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 75V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 7.4 mOhm @ 66A, 10V,

Momotae

SPI11N60S5BKSA1

Infineon Technologies

SPI11N60S5BKSA1

Wahanga Tapeke: 272

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 380 mOhm @ 7A, 10V,

Momotae

Infineon Technologies

IPS10N03LA G

Wahanga Tapeke: 6071

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 30A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 10.4 mOhm @ 30A, 10V,

Momotae

Infineon Technologies

SPB10N10L G

Wahanga Tapeke: 255

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10.3A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 154 mOhm @ 8.1A, 10V,

Momotae

3600

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