Transistors - FETs, MOSFETs - Kotahi

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Transistors - FETs, MOSFETs - Kotahi

EPC2001

Wahanga Tapeke: 18487

Momo FET: N-Channel, Hangarau: GaNFET (Gallium Nitride), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 25A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, Rds Kei (Max) @ Id, Vgs: 7 mOhm @ 25A, 5V,

Momotae

EPC2049ENGRT

Wahanga Tapeke: 4397

Momo FET: N-Channel, Hangarau: GaNFET (Gallium Nitride), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 16A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, Rds Kei (Max) @ Id, Vgs: 5 mOhm @ 15A, 5V,

Momotae

EPC2021

Wahanga Tapeke: 14286

Momo FET: N-Channel, Hangarau: GaNFET (Gallium Nitride), Tohaina ki te Hiko Puna (Vdss): 80V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 90A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, Rds Kei (Max) @ Id, Vgs: 2.5 mOhm @ 29A, 5V,

Momotae

EPC2025

Wahanga Tapeke: 1945

Momo FET: N-Channel, Hangarau: GaNFET (Gallium Nitride), Tohaina ki te Hiko Puna (Vdss): 300V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, Rds Kei (Max) @ Id, Vgs: 150 mOhm @ 3A, 5V,

Momotae

EPC2031

Wahanga Tapeke: 8638

Momo FET: N-Channel, Hangarau: GaNFET (Gallium Nitride), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 31A (Ta), Rds Kei (Max) @ Id, Vgs: 2.6 mOhm @ 30A, 5V,

Momotae

EPC2018

Wahanga Tapeke: 8926

Momo FET: N-Channel, Hangarau: GaNFET (Gallium Nitride), Tohaina ki te Hiko Puna (Vdss): 150V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, Rds Kei (Max) @ Id, Vgs: 25 mOhm @ 6A, 5V,

Momotae

EPC2016

Wahanga Tapeke: 50068

Momo FET: N-Channel, Hangarau: GaNFET (Gallium Nitride), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, Rds Kei (Max) @ Id, Vgs: 16 mOhm @ 11A, 5V,

Momotae

EPC2051ENGRT

Wahanga Tapeke: 10801

Momo FET: N-Channel, Hangarau: GaNFET (Gallium Nitride), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.7A, Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, Rds Kei (Max) @ Id, Vgs: 25 mOhm @ 3A, 5V,

Momotae

EPC8004

Wahanga Tapeke: 28614

Momo FET: N-Channel, Hangarau: GaNFET (Gallium Nitride), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.7A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, Rds Kei (Max) @ Id, Vgs: 110 mOhm @ 500mA, 5V,

Momotae

EPC8009

Wahanga Tapeke: 27880

Momo FET: N-Channel, Hangarau: GaNFET (Gallium Nitride), Tohaina ki te Hiko Puna (Vdss): 65V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.7A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, Rds Kei (Max) @ Id, Vgs: 130 mOhm @ 500mA, 5V,

Momotae

EPC2030ENGRT

Wahanga Tapeke: 16295

Momo FET: N-Channel, Hangarau: GaNFET (Gallium Nitride), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 31A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, Rds Kei (Max) @ Id, Vgs: 2.4 mOhm @ 30A, 5V,

Momotae

EPC2007

Wahanga Tapeke: 69589

Momo FET: N-Channel, Hangarau: GaNFET (Gallium Nitride), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, Rds Kei (Max) @ Id, Vgs: 30 mOhm @ 6A, 5V,

Momotae

EPC2015

Wahanga Tapeke: 18703

Momo FET: N-Channel, Hangarau: GaNFET (Gallium Nitride), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 33A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, Rds Kei (Max) @ Id, Vgs: 4 mOhm @ 33A, 5V,

Momotae

EPC2031ENGRT

Wahanga Tapeke: 17048

Momo FET: N-Channel, Hangarau: GaNFET (Gallium Nitride), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 31A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, Rds Kei (Max) @ Id, Vgs: 2.6 mOhm @ 30A, 5V,

Momotae

EPC2012

Wahanga Tapeke: 54098

Momo FET: N-Channel, Hangarau: GaNFET (Gallium Nitride), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, Rds Kei (Max) @ Id, Vgs: 100 mOhm @ 3A, 5V,

Momotae

EPC2010

Wahanga Tapeke: 9929

Momo FET: N-Channel, Hangarau: GaNFET (Gallium Nitride), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, Rds Kei (Max) @ Id, Vgs: 25 mOhm @ 6A, 5V,

Momotae

EPC2022

Wahanga Tapeke: 14027

Momo FET: N-Channel, Hangarau: GaNFET (Gallium Nitride), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, Rds Kei (Max) @ Id, Vgs: 3.2 mOhm @ 25A, 5V,

Momotae

EPC2024

Wahanga Tapeke: 14687

Momo FET: N-Channel, Hangarau: GaNFET (Gallium Nitride), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, Rds Kei (Max) @ Id, Vgs: 1.5 mOhm @ 37A, 5V,

Momotae

EPC2033

Wahanga Tapeke: 13722

Momo FET: N-Channel, Hangarau: GaNFET (Gallium Nitride), Tohaina ki te Hiko Puna (Vdss): 150V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 31A (Ta), Rds Kei (Max) @ Id, Vgs: 7 mOhm @ 25A, 5V,

Momotae

EPC2032

Wahanga Tapeke: 16483

Momo FET: N-Channel, Hangarau: GaNFET (Gallium Nitride), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 48A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, Rds Kei (Max) @ Id, Vgs: 4 mOhm @ 30A, 5V,

Momotae

EPC2020

Wahanga Tapeke: 14515

Momo FET: N-Channel, Hangarau: GaNFET (Gallium Nitride), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 90A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, Rds Kei (Max) @ Id, Vgs: 2.2 mOhm @ 31A, 5V,

Momotae

EPC2029

Wahanga Tapeke: 16856

Momo FET: N-Channel, Hangarau: GaNFET (Gallium Nitride), Tohaina ki te Hiko Puna (Vdss): 80V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 48A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, Rds Kei (Max) @ Id, Vgs: 3.2 mOhm @ 30A, 5V,

Momotae

EPC2034

Wahanga Tapeke: 7981

Momo FET: N-Channel, Hangarau: GaNFET (Gallium Nitride), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 48A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, Rds Kei (Max) @ Id, Vgs: 10 mOhm @ 20A, 5V,

Momotae

EPC2035

Wahanga Tapeke: 195456

Momo FET: N-Channel, Hangarau: GaNFET (Gallium Nitride), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, Rds Kei (Max) @ Id, Vgs: 45 mOhm @ 1A, 5V,

Momotae

EPC2023

Wahanga Tapeke: 18953

Momo FET: N-Channel, Hangarau: GaNFET (Gallium Nitride), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A (Ta), Rds Kei (Max) @ Id, Vgs: 1.3 mOhm @ 40A, 5V,

Momotae

EPC2015C

Wahanga Tapeke: 30169

Momo FET: N-Channel, Hangarau: GaNFET (Gallium Nitride), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 53A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, Rds Kei (Max) @ Id, Vgs: 4 mOhm @ 33A, 5V,

Momotae

EPC2014

Wahanga Tapeke: 74091

Momo FET: N-Channel, Hangarau: GaNFET (Gallium Nitride), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, Rds Kei (Max) @ Id, Vgs: 16 mOhm @ 5A, 5V,

Momotae

EPC2030

Wahanga Tapeke: 22960

Momo FET: N-Channel, Hangarau: GaNFET (Gallium Nitride), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 31A (Ta), Rds Kei (Max) @ Id, Vgs: 2.4 mOhm @ 30A, 5V,

Momotae

EPC8010

Wahanga Tapeke: 46864

Momo FET: N-Channel, Hangarau: GaNFET (Gallium Nitride), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.7A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, Rds Kei (Max) @ Id, Vgs: 160 mOhm @ 500mA, 5V,

Momotae

EPC2045ENGRT

Wahanga Tapeke: 26260

Momo FET: N-Channel, Hangarau: GaNFET (Gallium Nitride), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 16A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, Rds Kei (Max) @ Id, Vgs: 7 mOhm @ 16A, 5V,

Momotae

EPC2010C

Wahanga Tapeke: 17919

Momo FET: N-Channel, Hangarau: GaNFET (Gallium Nitride), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 22A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, Rds Kei (Max) @ Id, Vgs: 25 mOhm @ 12A, 5V,

Momotae

EPC2012C

Wahanga Tapeke: 54040

Momo FET: N-Channel, Hangarau: GaNFET (Gallium Nitride), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, Rds Kei (Max) @ Id, Vgs: 100 mOhm @ 3A, 5V,

Momotae

EPC2001C

Wahanga Tapeke: 31126

Momo FET: N-Channel, Hangarau: GaNFET (Gallium Nitride), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 36A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, Rds Kei (Max) @ Id, Vgs: 7 mOhm @ 25A, 5V,

Momotae

EPC2202

Wahanga Tapeke: 48425

Momo FET: N-Channel, Hangarau: GaNFET (Gallium Nitride), Tohaina ki te Hiko Puna (Vdss): 80V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 18A, Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, Rds Kei (Max) @ Id, Vgs: 17 mOhm @ 11A, 5V,

Momotae

EPC2019

Wahanga Tapeke: 37744

Momo FET: N-Channel, Hangarau: GaNFET (Gallium Nitride), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8.5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, Rds Kei (Max) @ Id, Vgs: 50 mOhm @ 7A, 5V,

Momotae

EPC2007C

Wahanga Tapeke: 74756

Momo FET: N-Channel, Hangarau: GaNFET (Gallium Nitride), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, Rds Kei (Max) @ Id, Vgs: 30 mOhm @ 6A, 5V,

Momotae

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