Menu
MaoriMaori
Rfqs / ota
0Rfqs / ota

Transistors - FETs, MOSFETs - Kotahi

2SK4066-E
ON Semiconductor

2SK4066-E

Wahanga Tapeke: 1172

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4V, 10V, Rds Kei (Max) @ Id, Vgs: 4.7 mOhm @ 50A, 10V,

Ki te hiahia
2SK4066-DL-E
ON Semiconductor

2SK4066-DL-E

Wahanga Tapeke: 1110

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4V, 10V, Rds Kei (Max) @ Id, Vgs: 4.7 mOhm @ 50A, 10V,

Ki te hiahia
2SK4043LS
ON Semiconductor

2SK4043LS

Wahanga Tapeke: 1127

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4V, Rds Kei (Max) @ Id, Vgs: 21 mOhm @ 10A, 4V,

Ki te hiahia
2SK4065-DL-E
ON Semiconductor

2SK4065-DL-E

Wahanga Tapeke: 1115

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 75V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4V, 10V, Rds Kei (Max) @ Id, Vgs: 6 mOhm @ 50A, 10V,

Ki te hiahia
2SK3748
ON Semiconductor

2SK3748

Wahanga Tapeke: 1129

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 1500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 7 Ohm @ 2A, 10V,

Ki te hiahia
2SK3747-MG8
ON Semiconductor

2SK3747-MG8

Wahanga Tapeke: 1091

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 1500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 13 Ohm @ 1A, 10V,

Ki te hiahia
2SK3746
ON Semiconductor

2SK3746

Wahanga Tapeke: 1143

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 1500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 13 Ohm @ 1A, 10V,

Ki te hiahia
2SK3747
ON Semiconductor

2SK3747

Wahanga Tapeke: 1187

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 1500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 13 Ohm @ 1A, 10V,

Ki te hiahia
2SK3704
ON Semiconductor

2SK3704

Wahanga Tapeke: 1118

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 45A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4V, 10V, Rds Kei (Max) @ Id, Vgs: 14 mOhm @ 23A, 10V,

Ki te hiahia
2SK3745LS
ON Semiconductor

2SK3745LS

Wahanga Tapeke: 1162

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 1500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 13 Ohm @ 1A, 10V,

Ki te hiahia
2SK3703
ON Semiconductor

2SK3703

Wahanga Tapeke: 6201

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 30A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4V, 10V, Rds Kei (Max) @ Id, Vgs: 26 mOhm @ 15A, 10V,

Ki te hiahia
2SJ652-RA11
ON Semiconductor

2SJ652-RA11

Wahanga Tapeke: 1181

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 28A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4V, 10V, Rds Kei (Max) @ Id, Vgs: 38 mOhm @ 14A, 10V,

Ki te hiahia
2SK4125
ON Semiconductor

2SK4125

Wahanga Tapeke: 829

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 17A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 610 mOhm @ 7A, 10V,

Ki te hiahia
2SJ656
ON Semiconductor

2SJ656

Wahanga Tapeke: 835

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 18A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4V, 10V, Rds Kei (Max) @ Id, Vgs: 75.5 mOhm @ 9A, 10V,

Ki te hiahia
2SK4124
ON Semiconductor

2SK4124

Wahanga Tapeke: 818

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 430 mOhm @ 8A, 10V,

Ki te hiahia
2SK4171
ON Semiconductor

2SK4171

Wahanga Tapeke: 814

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4V, 10V, Rds Kei (Max) @ Id, Vgs: 7.2 mOhm @ 50A, 10V,

Ki te hiahia
2SK4085LS
ON Semiconductor

2SK4085LS

Wahanga Tapeke: 852

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 430 mOhm @ 8A, 10V,

Ki te hiahia
2SK3708
ON Semiconductor

2SK3708

Wahanga Tapeke: 838

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 30A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4V, 10V, Rds Kei (Max) @ Id, Vgs: 33 mOhm @ 15A, 10V,

Ki te hiahia
2SK3707
ON Semiconductor

2SK3707

Wahanga Tapeke: 828

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4V, 10V, Rds Kei (Max) @ Id, Vgs: 60 mOhm @ 10A, 10V,

Ki te hiahia
2N7002E
Vishay Siliconix

2N7002E

Wahanga Tapeke: 125033

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 240mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3 Ohm @ 250mA, 10V,

Ki te hiahia
2N7002K,215
NXP USA Inc.

2N7002K,215

Wahanga Tapeke: 892

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 340mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.9 Ohm @ 500mA, 10V,

Ki te hiahia
2N7002L6327HTSA1
Infineon Technologies

2N7002L6327HTSA1

Wahanga Tapeke: 723

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 300mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3 Ohm @ 500mA, 10V,

Ki te hiahia
2SK4021(Q)
Toshiba Semiconductor and Storage

2SK4021(Q)

Wahanga Tapeke: 783

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 250V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1 Ohm @ 2.5A, 10V,

Ki te hiahia
2SK4017(Q)
Toshiba Semiconductor and Storage

2SK4017(Q)

Wahanga Tapeke: 100330

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4V, 10V, Rds Kei (Max) @ Id, Vgs: 100 mOhm @ 2.5A, 10V,

Ki te hiahia
2SK4016(Q)
Toshiba Semiconductor and Storage

2SK4016(Q)

Wahanga Tapeke: 6095

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 13A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 500 mOhm @ 6.5A, 10V,

Ki te hiahia
2SK3868(Q,M)
Toshiba Semiconductor and Storage

2SK3868(Q,M)

Wahanga Tapeke: 709

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.7 Ohm @ 2.5A, 10V,

Ki te hiahia
2SK3906(Q)
Toshiba Semiconductor and Storage

2SK3906(Q)

Wahanga Tapeke: 711

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 330 mOhm @ 10A, 10V,

Ki te hiahia
2SK3844(Q)
Toshiba Semiconductor and Storage

2SK3844(Q)

Wahanga Tapeke: 756

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 45A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 5.8 mOhm @ 23A, 10V,

Ki te hiahia
2SK3662(F)
Toshiba Semiconductor and Storage

2SK3662(F)

Wahanga Tapeke: 712

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 35A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4V, 10V, Rds Kei (Max) @ Id, Vgs: 12.5 mOhm @ 18A, 10V,

Ki te hiahia
2SK3462(TE16L1,NQ)
Toshiba Semiconductor and Storage

2SK3462(TE16L1,NQ)

Wahanga Tapeke: 761

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 250V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.7 Ohm @ 1.5A, 10V,

Ki te hiahia
2SK3466(TE24L,Q)
Toshiba Semiconductor and Storage

2SK3466(TE24L,Q)

Wahanga Tapeke: 730

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.5 Ohm @ 5A, 10V,

Ki te hiahia
2SK3388(TE24L,Q)
Toshiba Semiconductor and Storage

2SK3388(TE24L,Q)

Wahanga Tapeke: 727

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 250V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 105 mOhm @ 10A, 10V,

Ki te hiahia
2SK3403(Q)
Toshiba Semiconductor and Storage

2SK3403(Q)

Wahanga Tapeke: 759

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 450V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 13A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 400 mOhm @ 6A, 10V,

Ki te hiahia
2SK3313(Q)
Toshiba Semiconductor and Storage

2SK3313(Q)

Wahanga Tapeke: 769

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 620 mOhm @ 6A, 10V,

Ki te hiahia
2SK3342(TE16L1,NQ)
Toshiba Semiconductor and Storage

2SK3342(TE16L1,NQ)

Wahanga Tapeke: 768

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 250V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1 Ohm @ 2.5A, 10V,

Ki te hiahia
2SK2883(TE24L,Q)
Toshiba Semiconductor and Storage

2SK2883(TE24L,Q)

Wahanga Tapeke: 752

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 800V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 3.6 Ohm @ 1.5A, 10V,

Ki te hiahia