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Transistors - FETs, MOSFETs - Kotahi

BUK7C1R8-60EJ
NXP USA Inc.

BUK7C1R8-60EJ

Wahanga Tapeke: 6258

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V,

Ki te hiahia
BUK7C1R4-40EJ
NXP USA Inc.

BUK7C1R4-40EJ

Wahanga Tapeke: 2529

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V,

Ki te hiahia
BUK7C1R2-40EJ
NXP USA Inc.

BUK7C1R2-40EJ

Wahanga Tapeke: 2518

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V,

Ki te hiahia
BUK9Y9R9-80E,115
NXP USA Inc.

BUK9Y9R9-80E,115

Wahanga Tapeke: 2547

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 80V,

Ki te hiahia
BUK9Y98-80E,115
NXP USA Inc.

BUK9Y98-80E,115

Wahanga Tapeke: 2588

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 80V,

Ki te hiahia
BUK9Y7R8-80E,115
NXP USA Inc.

BUK9Y7R8-80E,115

Wahanga Tapeke: 2582

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 80V,

Ki te hiahia
BUK9E1R8-40E,127
NXP USA Inc.

BUK9E1R8-40E,127

Wahanga Tapeke: 2573

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, 10V, Rds Kei (Max) @ Id, Vgs: 1.7 mOhm @ 25A, 10V,

Ki te hiahia
BUK9E8R5-40E,127
NXP USA Inc.

BUK9E8R5-40E,127

Wahanga Tapeke: 6339

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 75A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, 10V, Rds Kei (Max) @ Id, Vgs: 6.6 mOhm @ 20A, 10V,

Ki te hiahia
BUK9E6R1-100E,127
NXP USA Inc.

BUK9E6R1-100E,127

Wahanga Tapeke: 2510

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, 10V, Rds Kei (Max) @ Id, Vgs: 5.9 mOhm @ 25A, 10V,

Ki te hiahia
BUK9E4R9-60E,127
NXP USA Inc.

BUK9E4R9-60E,127

Wahanga Tapeke: 2556

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, 10V, Rds Kei (Max) @ Id, Vgs: 4.5 mOhm @ 25A, 10V,

Ki te hiahia
BUK9E4R4-80E,127
NXP USA Inc.

BUK9E4R4-80E,127

Wahanga Tapeke: 2545

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 80V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, 10V, Rds Kei (Max) @ Id, Vgs: 4.2 mOhm @ 25A, 10V,

Ki te hiahia
BUK9E3R7-60E,127
NXP USA Inc.

BUK9E3R7-60E,127

Wahanga Tapeke: 2588

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.4 mOhm @ 25A, 10V,

Ki te hiahia
BUK9E2R8-60E,127
NXP USA Inc.

BUK9E2R8-60E,127

Wahanga Tapeke: 2547

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, 10V, Rds Kei (Max) @ Id, Vgs: 2.6 mOhm @ 25A, 10V,

Ki te hiahia
BUK9E3R2-40E,127
NXP USA Inc.

BUK9E3R2-40E,127

Wahanga Tapeke: 2570

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, 10V, Rds Kei (Max) @ Id, Vgs: 2.8 mOhm @ 25A, 10V,

Ki te hiahia
BUK9E1R9-40E,127
NXP USA Inc.

BUK9E1R9-40E,127

Wahanga Tapeke: 2502

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V,

Ki te hiahia
BUK9E2R3-40E,127
NXP USA Inc.

BUK9E2R3-40E,127

Wahanga Tapeke: 2570

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, 10V, Rds Kei (Max) @ Id, Vgs: 2.2 mOhm @ 25A, 10V,

Ki te hiahia
BUK9E1R6-30E,127
NXP USA Inc.

BUK9E1R6-30E,127

Wahanga Tapeke: 2576

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, 10V, Rds Kei (Max) @ Id, Vgs: 1.4 mOhm @ 25A, 10V,

Ki te hiahia
BUK9E15-60E,127
NXP USA Inc.

BUK9E15-60E,127

Wahanga Tapeke: 2588

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 54A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, 10V, Rds Kei (Max) @ Id, Vgs: 13 mOhm @ 15A, 10V,

Ki te hiahia
BUK956R1-100E,127
NXP USA Inc.

BUK956R1-100E,127

Wahanga Tapeke: 6333

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, 10V, Rds Kei (Max) @ Id, Vgs: 5.9 mOhm @ 25A, 10V,

Ki te hiahia
BUK958R5-40E,127
NXP USA Inc.

BUK958R5-40E,127

Wahanga Tapeke: 2510

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 75A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, 10V, Rds Kei (Max) @ Id, Vgs: 6.6 mOhm @ 20A, 10V,

Ki te hiahia
BUK954R4-80E,127
NXP USA Inc.

BUK954R4-80E,127

Wahanga Tapeke: 2512

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 80V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, 10V, Rds Kei (Max) @ Id, Vgs: 4.2 mOhm @ 25A, 10V,

Ki te hiahia
BUK952R8-60E,127
NXP USA Inc.

BUK952R8-60E,127

Wahanga Tapeke: 2572

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, 10V, Rds Kei (Max) @ Id, Vgs: 2.6 mOhm @ 25A, 10V,

Ki te hiahia
BUK952R3-40E,127
NXP USA Inc.

BUK952R3-40E,127

Wahanga Tapeke: 6262

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, 10V, Rds Kei (Max) @ Id, Vgs: 2.2 mOhm @ 25A, 10V,

Ki te hiahia
BUK951R9-40E,127
NXP USA Inc.

BUK951R9-40E,127

Wahanga Tapeke: 2587

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, 10V, Rds Kei (Max) @ Id, Vgs: 1.7 mOhm @ 25A, 10V,

Ki te hiahia
BUK951R6-30E,127
NXP USA Inc.

BUK951R6-30E,127

Wahanga Tapeke: 6281

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, 10V, Rds Kei (Max) @ Id, Vgs: 1.4 mOhm @ 25A, 10V,

Ki te hiahia
BUK7E4R0-80E,127
NXP USA Inc.

BUK7E4R0-80E,127

Wahanga Tapeke: 2546

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 80V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V,

Ki te hiahia
BUK9515-60E,127
NXP USA Inc.

BUK9515-60E,127

Wahanga Tapeke: 2529

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 54A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, 10V, Rds Kei (Max) @ Id, Vgs: 13 mOhm @ 15A, 10V,

Ki te hiahia
BUK7E1R6-30E,127
NXP USA Inc.

BUK7E1R6-30E,127

Wahanga Tapeke: 6300

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.6 mOhm @ 25A, 10V,

Ki te hiahia
BUK753R5-60E,127
NXP USA Inc.

BUK753R5-60E,127

Wahanga Tapeke: 2561

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 3.5 mOhm @ 25A, 10V,

Ki te hiahia
BUK751R6-30E,127
NXP USA Inc.

BUK751R6-30E,127

Wahanga Tapeke: 6316

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.6 mOhm @ 25A, 10V,

Ki te hiahia
BUK7Y08-40B/C,115
NXP USA Inc.

BUK7Y08-40B/C,115

Wahanga Tapeke: 2544

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 75A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 8 mOhm @ 25A, 10V,

Ki te hiahia
BUK7Y25-40B/C,115
NXP USA Inc.

BUK7Y25-40B/C,115

Wahanga Tapeke: 2544

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 35.3A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 25 mOhm @ 20A, 10V,

Ki te hiahia
BUK655R0-75C,127
NXP USA Inc.

BUK655R0-75C,127

Wahanga Tapeke: 2509

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 75V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 5.3 mOhm @ 25A, 10V,

Ki te hiahia
BUK654R6-55C,127
NXP USA Inc.

BUK654R6-55C,127

Wahanga Tapeke: 2550

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 5.4 mOhm @ 25A, 10V,

Ki te hiahia
BUK653R7-30C,127
NXP USA Inc.

BUK653R7-30C,127

Wahanga Tapeke: 2483

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.9 mOhm @ 25A, 10V,

Ki te hiahia
BUK654R0-75C,127
NXP USA Inc.

BUK654R0-75C,127

Wahanga Tapeke: 2520

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 75V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 4.2 mOhm @ 25A, 10V,

Ki te hiahia